A fundamental requirement for the development of advanced electronic device architectures based on graphene nanoribbon (GNR) technology is the ability to modulate the band structure and charge carrier concentration by substituting specific carbon atoms in the hexagonal graphene lattice with p- or n-type dopant heteroatoms. Here we report the atomically precise introduction of group III dopant atoms into bottom-up fabricated semiconducting armchair GNRs (AGNRs). Trigonal-planar B atoms along the backbone of the GNR share an empty p-orbital with the extended π-band for dopant functionality. Scanning tunneling microscopy (STM) topography reveals a characteristic modulation of the local density of states along the backbone of the GNR that is superimposable with the expected position and concentration of dopant B atoms. First-principles calculations support the experimental findings and provide additional insight into the band structure of B-doped 7-AGNRs.

TitleAtomically precise graphene nanoribbon heterojunctions from a single molecular precursor AbstractThe rational bottom-up synthesis of atomically defined graphene nanoribbon (GNR)heterojunctions represents a key enabling technology for the design of nanoscale electronic devices. Synthetic strategies have thus far relied on the random copolymerization of two electronically distinctive molecular precursors to yield a segmented band structure within a GNR. Here we report the fabrication and electronic characterization of atomically precise GNR heterojunctions prepared through a late-stage functionalization of chevron GNRs obtained from a single precursor that features fluorenone substituents along the convex edges. Excitation of the GNR induces cleavage of sacrificial carbonyl groups at the GNR edge, thus giving rise to atomically well-defined heterojunctions comprised of segments of fluorenone GNR and unfunctionalized chevron GNR. The structure of fluorenone/unfunctionalized GNR heterojunctions was characterized using bond-resolved STM (BRSTM) which enables chemical bonds to be imaged via STM at T = 4.5 K. Scanning tunneling spectroscopy (STS) reveals that the band alignment across the interface yields a staggered gap Type II heterojunction and is consistent with first-principles calculations. Detailed spectroscopic and theoretical studies reveal that the band realignment at the interface between fluorenone and unfunctionalized chevron GNRs proceeds over a distance less than 1nm, leading to extremely large effective fields.

Bottom-up graphene nanoribbon (GNR) heterojunctions are nanoscale strips of graphene whose electronic structure abruptly changes across a covalently bonded interface. Their rational design offers opportunities for profound technological advancements enabled by their extraordinary structural and electronic properties. Thus far, the most critical aspect of their synthesis, the control over sequence and position of heterojunctions along the length of a ribbon, has been plagued by randomness in monomer sequences emerging from step-growth copolymerization of distinct monomers. All bottom-up GNR heterojunction structures created so far have exhibited random sequences of heterojunctions and, while useful for fundamental scientific studies, are difficult to incorporate into functional nanodevices as a result. In contrast, we describe a hierarchical fabrication strategy that allows the growth of bottom-up GNRs that preferentially exhibit a single heterojunction interface rather than a random statistical sequence of junctions along the ribbon. Such heterojunctions provide a viable platform that could be directly used in functional GNR-based device applications at the molecular scale. Our hierarchical GNR fabrication strategy is based on differences in the dissociation energies of C-Br and C-I bonds that allow control over the growth sequence of the block copolymers from which GNRs are formed and consequently yields a significantly higher proportion of single-junction GNR heterostructures. Scanning tunneling spectroscopy and density functional theory calculations confirm that hierarchically grown heterojunctions between chevron GNR (cGNR) and binaphthyl-cGNR segments exhibit straddling Type I band alignment in structures that are only one atomic layer thick and 3 nm in width.

A series of trigonal planar N-, O-, and S-dopant atoms incorporated along the convex protrusion lining the edges of bottom-up synthesized chevron graphene nanoribbons (cGNRs) induce a characteristic shift in the energy of conduction and valence band edge states along with a significant reduction of the band gap of up to 0.3 eV per dopant atom per monomer. A combination of scanning probe spectroscopy and density functional theory calculations reveals that the direction and the magnitude of charge transfer between the dopant atoms and the cGNR backbone are dominated by inductive effects and follow the expected trend in electronegativity. The introduction of heteroatom dopants with trigonal planar geometry ensures an efficient overlap of a p-orbital lone-pair centered on the dopant atom with the extended π-system of the cGNR backbone effectively extending the conjugation length. Our work demonstrates a widely tunable method for band gap engineering of graphene nanostructures for advanced electronic applications.

Atomically precise engineering of defined segments within individual graphene nanoribbons (GNRs) represents a key enabling technology for the development of advanced functional device architectures. Here, the bottom-up synthesis of chevron GNRs decorated with reactive functional groups derived from 9-methyl-9H-carbazole is reported. Scanning tunneling and non-contact atomic force microscopy reveal that a thermal activation of GNRs induces the rearrangement of the electron-rich carbazole into an electron-deficient phenanthridine. The selective chemical edge-reconstruction of carbazole-substituted chevron GNRs represents a practical strategy for the controlled fabrication of spatially defined GNR heterostructures from a single molecular precursor.

Graphene nanoribbons (GNRs) are promising materials for the production of nanoscale devices. [1][2][3][4][5] In contrast to graphene, GNRs can be metallic or semiconducting with a tunable band gap that depends on the ribbon width and the edge configuration. [6][7][8][9][10] Carbon nanotubes are a similar 1D material but despite a 20 year history, the large-area synthesis of monochiral carbon nanotubes remains challenging. [11] On the other hand, nanoribbons can be fabricated with atomically controlled precision thanks to the bottom-up nanofabrication techniques. [12][13][14][15][16][17][18][19][20] Thus, GNRs combine the best attributes of the nanotube and graphene worlds.Engineering of GNR-based optoelectronic devices requires an understanding of the charge transfer effect on the A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm −1 ) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.

Deterministic bottom-up approaches for synthesizing atomically well-defined graphene nanoribbons (GNRs) largely rely on the surface-catalyzed activation of selected labile bonds in a molecular precursor followed by step growth polymerization and cyclodehydrogenation. While the majority of successful GNR precursors rely on the homolytic cleavage of thermally labile CBr bonds, the introduction of weaker C-I bonds provides access to monomers that can be polymerized at significantly lower temperatures, thus helping to increase the flexibility of the GNR synthesis process. Scanning tunneling microscopy (STM) imaging of molecular precursors, activated intermediates, and polymers resulting from stepwise thermal annealing of both Br and I substituted precursors for chevron GNRs reveals that the polymerization of both precursors proceeds at similar temperatures on Au(111). This observation is consistent with diffusionlimited polymerization of the surface-stabilized radical intermediates that emerge from homolytic cleavage of either the C-Br or the C-I bonds.3

Pyrenes, as photoactive polycyclic aromatic hydrocarbons (PAHs), represent promising modules for the bottom-up assembly of functional nanostructures. Here, we introduce the synthesis of a family of pyrene derivatives peripherally functionalized with pyridin-4-ylethynyl termini and comprehensively characterize their self-assembly abilities on a smooth Ag(111) support by scanning tunneling microscopy. By deliberate selection of number and geometric positioning of the pyridyl-terminated substituents, two-dimensional arrays, one-dimensional coordination chains, and chiral, porous kagomé-type networks can be tailored. A comparison to phenyl-functionalized reference pyrenes, not supporting the self-assembly of ordered structures at low coverage, highlights the role of the pyridyl moieties for supramolecular crocheting and knitting. Furthermore, we demonstrate the selective spangling of pores in the two-dimensional pyrene assemblies by a distinct number of iodine atoms as guests by atomically resolved imaging and complementary X-ray photoelectron spectroscopy.