This paper describes a fabrication process for realizing Indium-Phosphide-based photonic-integrated circuits (PICs) with a high level of integration to target a wide variety of optical applications. To show the diversity in PICs achievable with our open-access foundry process, we illustrate two examples: a fully-integrated 20 Gb/s dual-polarization electro-absorption-modulated laser, and a balanced detector composed of avalanche photodiodes for detection of 28 Gb/s optical signals. On another note, datacenters are increasingly relying on hybrid integration of PICs from different technology platforms to increase transmission capacity, while simultaneously lowering cost, size, and power consumption. Several technology platforms require surface coupling rather than the traditional edge coupling to couple the light from one PIC to another. To accommodate the surface-coupling approach in our integration platform, we have developed a strategy to transfer the following optical Input/Output devices into our fabrication process: grating couplers, and vertical mirrors. In addition, we introduced etched facets into the process to improve the usability of our edge-coupling elements. We believe that the additional flexibility in Input/Output interfacing combined with the integration of multiple devices onto one PIC to reduce the number of PIC-to-PIC alignments can contribute significantly to the development of compact, low-cost, and high-performance datacenter modules.
An InP-based photonic integrated circuit (PIC) transmitter for pulsed Gaussian-modulated coherent-state (GMCS) CV-QKD protocol is presented and characterized. Results show potential asymptotic secret key rates of 0.4 Mbps at 11 km, and up to 2.3 Mbps in back-to-back configuration.
We demonstrate InP PICs with avalanche photodiodes (APD) consisting of InP and InAlAs multiplication regions and investigate these devices regarding their DC and RF linearity characteristics. The optical input dependent gain, bandwidth and output power are characterized and compared to electric field simulations. The space-charge induced electric field reduction is considered to determine the measured properties of the APDs. The APDs with an InAlAs multiplication region exhibit a high bandwidth of 27 GHz in combination with high sensitivity for optical input powers low as 34 µW at a responsivity of 0.65 A/W and a dynamic range of 34 dB. Although the APD with an InP multiplication region shows lower bandwidths of maximum 6 GHz, it demonstrates a high sensitivity for input powers low as 26 µW at a responsivity of 0.85 A/W and a dynamic range of 30 dB making it very attractive for sensing applications. Further, the bias and optical input dependent electric field help to conclude the linearity limitations of the presented devices.
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