2018
DOI: 10.1109/jstqe.2017.2723844
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Waveguide Integrated Balanced Photodetectors for Coherent Receivers

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Cited by 28 publications
(12 citation statements)
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“…In comparison to the p-i-n PD, avalanche photodiodes (APDs) can provide additional multiplication gains and larger signal to noise (S/N) ratios for the down converted intermediate frequency (IF) signal. However, the extra carrier multiplication process inside the APD slows down the internal carrier transit time, usually resulting in a smaller saturation current than that of the p-i-n PD [6,7], which impeded its application in the self-heterodyne FMCW lidar system. Compared to our previous work [8,9], in this work, we demonstrate the In0.52 Al0.48 As based vertical-illuminated APD with a novel design in the multiplication region and quadruple mesa shape which can effectively shorten the internal avalanche delay time and suppress the edge breakdown, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…In comparison to the p-i-n PD, avalanche photodiodes (APDs) can provide additional multiplication gains and larger signal to noise (S/N) ratios for the down converted intermediate frequency (IF) signal. However, the extra carrier multiplication process inside the APD slows down the internal carrier transit time, usually resulting in a smaller saturation current than that of the p-i-n PD [6,7], which impeded its application in the self-heterodyne FMCW lidar system. Compared to our previous work [8,9], in this work, we demonstrate the In0.52 Al0.48 As based vertical-illuminated APD with a novel design in the multiplication region and quadruple mesa shape which can effectively shorten the internal avalanche delay time and suppress the edge breakdown, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…I NTEGRATED PHOTONICS and the development of high performance photonic integrated circuits was driven by telecommunication and its ever increasing demand for higher bit rates. At the receiver end, this was addressed by waveguide integrated high-speed PIN and UTC photodiodes [1], showing high bandwidths and RF output powers [2], [3]. However, these types of photodiodes are intrinsically limited in sensitivity.…”
Section: Introductionmentioning
confidence: 99%
“…Up to now, we have developed high-speed and high-responsivity pin-PDs and avalanche photodiodes (APDs), both with a vertical illumination structure. While the waveguide structure is advantageous to mitigate the tradeoff between responsivity and bandwidth [2][3][4][5], the vertical illumination structure is still attractive in terms of device fabrication, reliability, and assembly. Particularly, the inverted p-down design we have developed enables the vertical illumination structure to boost bandwidth while maintaining a certain responsivity by incorporating a hybrid absorber consisting of p-type and undoped absorbers while maintaining the benefits of the vertical illumination structure.…”
Section: Introductionmentioning
confidence: 99%