Articles you may be interested inOptimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O 2 + beam J.Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument J.
Depth scale distortions in shallow implant secondary ion mass spectrometry profilesThe use of ultra-low-energy probes for the characterization of shallow implants using secondary ion mass spectrometry is now widely employed. However, as the energy is reduced, both the sputter and ion yields fall, leading to long analysis times and decreased sensitivity. This effect is most apparent when analyzing diffused low-energy implants where both dosimetry and junction depth are to be determined. To obtain accurate dosimetry of a distribution with a very narrow but high surface concentration, probes of 100-200 eV must be used (O 2 ϩ for analysis of B in Si͒. However, over most of the depth of the analysis, extreme depth resolution is not required. This work demonstrates the use of matching the ion energy to the task in hand, and investigates the quantification issues of changing energy within a single depth profile.
494Cooke et al.: The use of two beam energies in SIMS analysis 494
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