On determining accurate positions, separations, and internal profiles for delta layers

Dowsett, M. G.; Kelly, Jonathan Howe; Rowlands, G.; Ormsby, TJ; Guzman, Bryan B.; Augustus, P. D.; Beanland, Richard

doi:10.1016/s0169-4332(02)00646-3

Cited by 16 publications

(17 citation statements)

References 5 publications

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“…Here, we do not associate these parameters with identified physical phenomena but note that the whole function provides a very good description for delta layer profiles in organic materials. The centroid of this function is given by the center of the Gaussian part minus λ u , plus λ d [23]. It is this centroid that we shall use to define the depth sputtered for determining the sputtering rates.…”

Section: Sputtering Yieldsmentioning

confidence: 99%

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Seah

Havelund

Gilmore

2016

J. Am. Soc. Mass Spectrom.

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Abstract. A study is presented of the effects of sample temperature on the sputter depth profiling of two organic materials, NPB (N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine) and Irganox 1010, using a 5 keV Ar 2000 + cluster ion beam and analysis by secondary ion mass spectrometry. It is shown that at low temperatures, the yields increase slowly with temperature in accordance with the Universal Sputtering Yield equation where the energy term is now modified by Trouton's rule. This occurs up to a transition temperature, T T , which is, in turn, approximately 0.8T M , where T M is the sample melting temperature in Kelvin. For NPB and Irganox 1010, these transition temperatures are close to 15°C and 0°C, respectively. Above this temperature, the rate of increase of the sputtering yield rises by an order of magnitude. During sputtering, the depth resolution also changes with temperature with a very small change occurring below T T . At higher temperatures, the depth resolution improves but then rapidly degrades, possibly as a result first of local crater surface diffusion and then of bulk inter-diffusion. The secondary ion spectra also change with temperature with the intensities of the molecular entities increasing least. This agrees with a model in which the molecular entities arise near the crater rim. It is recommended that for consistent results, measurements for organic materials are always made at temperatures significantly below T T or 0.8 T M , and this is generally below room temperature.

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Section: Sputtering Yieldsmentioning

confidence: 99%

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Seah

Havelund

Gilmore

2016

J. Am. Soc. Mass Spectrom.

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“…In addition, these authors presented an analytical solution of the convolution integral as a delta layer response function or depth resolution function (DRF). Since then, the complete empirical DRF for SIMS, consisting of two exponentials and one Gaussian, was elaborated further and was successfully applied to numerous SIMS depth profiles of thin layers, notably atomic monolayers [43][44][45][46][47][48][49]. In 2003, the delta layer response function for SIMS after Dowsett et al was accepted as an ISO standard by the technical committee TC 201 on Surface Chemical Analysis [7].…”

Section: The Analytical Depth Resolution Function Of the Mri Modelmentioning

confidence: 99%

Analytical and numerical depth resolution functions in sputter profiling

Hofmann

Liu

Wang

et al. 2014

Applied Surface Science

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“…4͑b͒ by the curve with the white-centered circular points. 18 Here, this is at 0.07 nm. Wittmaack 22 felt that the peak position, z p , is safer than the centroid, z c .…”

Section: Resultsmentioning

confidence: 94%

“…A better fit is achieved with the response function of Dowsett et al 18,20,40,41 intended for use in profiling delta layers. The response function of Dowsett et al is for a delta function at one position with a rise to the maximum intensity of an exponential with characteristic length, u , and followed by a decay with characteristic length d .…”

Section: Resultsmentioning

confidence: 98%

“…Profile shifts arising from the coalescence of delta layers in SIMS have been analyzed in detail by Dowsett et al 18 The effect of the superimposed resolution functions associated with the depth profiling of delta layers in SIMS is to shift the first delta layer peak maximum away from the surface to an extent that increases with the primary ion energy. The coalescence must be modeled carefully to extract information about any sputter rate changes.…”

Section: Introductionmentioning

confidence: 99%

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Nonlinearities in depth profiling nanometer layers

Seah

Mulcahy²,

Biswas³

2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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An analysis is made of the sputter depth profiling of ultrathin silicon dioxide layers on silicon to evaluate the variation in the sputtering rate in the first few nanometers. Such changes in sputtering rate are important for the development of the analysis of nanoparticles. Cs+ ions are chosen as an example of a metal ion popular in secondary ion mass spectrometry (SIMS) studies that provide excellent depth resolution. It is found that, if it is assumed that the signal is linear with oxygen content, the sputtering rate falls rapidly by a factor of 4.8, with an exponential decay near 1.2 nm when using 600 eV Cs+ ions at 60° incidence angle. The interface may be described by the integral of the response function of Dowsett et al. developed for SIMS depth profiling of delta layers with λu=0.5 nm, λd=0.7 nm, and σ=0.4 nm, showing the excellent depth resolution. However, if published data for the nonlinearity of the signal with oxygen content are used, the rapid change is still seen but with an initial sputtering rate that is reduced from the above 4.8 to 3.5 times that at equilibrium.

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On determining accurate positions, separations, and internal profiles for delta layers

Cited by 16 publications

References 5 publications

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Analytical and numerical depth resolution functions in sputter profiling

Nonlinearities in depth profiling nanometer layers

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