Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

The integration of photochromic molecules into semiconducting polymer matrices via blending has recently attracted a great deal of attention, as it provides the means to reversibly modulate the output signal of electronic devices by using light as a remote control. However, the structural and electronic interactions between photochromic molecules and semiconducting polymers is far from being fully understood. Here we perform a comparative investigation by combining two photochromic diarylethene moieties possessing similar energy levels yet different propensity to aggregate with five prototypical polymer semiconductors exhibiting different energy levels and structural order, ranging from amorphous to semicrystalline. Our in-depth photochemical, structural, morphological and electrical characterization reveals that the photoresponsive behavior of thin-film transistors (TFTs) including polymer/diarylethenes blends as the active layer is governed by a complex interplay between the relative position of the energy levels and the polymer matrix microstructure. By matching the energy levels and optimizing the molecular packing, high-performance optically switchable organic thin-film transistors were fabricated. These findings represent a major step forward in the fabrication of light-responsive organic devices.

2D materials (2DMs), which can be produced by exfoliating bulk crystals of layered materials, display unique optical and electrical properties, making them attractive components for a wide range of technological applications. This review describes the most recent developments in the production of high-quality 2DMs based inks using liquid-phase exfoliation (LPE), combined with the patterning approaches, highlighting convenient and effective methods for generating materials and films with controlled thicknesses down to the atomic scale. Different processing strategies that can be employed to deposit the produced inks as patterns and functional thin-films are introduced, by focusing on those that can be easily translated to the industrial scale such as coating, spraying, and various printing technologies. By providing insight into the multiscale analyses of numerous physical and chemical properties of these functional films and patterns, with a specific focus on their extraordinary electronic characteristics, this review offers the readers crucial information for a profound understanding of the fundamental properties of these patterned surfaces as the millstone toward the generation of novel multifunctional devices. Finally, the challenges and opportunities associated to the 2DMs' integration into working opto-electronic (nano) devices is discussed.