While aluminum-based metallization schemes on Si and corresponding top-side connections via Albonds have been optimized for the last decades and are well understood today, only few investigations have been done on the interaction of thick Cu wire-bonds and copper-metallizations on SiC. In this work the mechanical as well as the electrical interactions of copper-metallization schemes have specially been analyzed and optimized for SiC-devices in high reliability applications. By utilizing temperature storage as well as active and passive temperature cycles at temperatures above 200°C it has been proven, that this metallization together with corresponding Cu-bond connections can enable higher junction-temperatures for SiC power electronic devices.
The reliability of silicon carbide vertical DMOS drain metallizations was investigated using conditions close to a possible application setup. We monitored the adhesion of silicon carbide dies with different contacts and metallizations that were silver-sintered to a copper substrate. The temperature range in an anticipated automobile application ranges between -40°C and 250°C and the reliability tests were performed for temperature dwelling at 250°C in air and temperature swings between -40°C and 200°C.
While aluminum-based metallization schemes on Si have been optimized for the last decades, only few investigations have been done on copper metallization with SiC-devices. Thus, in this work the mechanical as well as the electrical interactions of this metallization system have been analyzed and optimized for SiC-devices in high reliability applications. For optimizing the adhesion of the copper metallization stack on SiC devices, different metallization schemes consisting of adhesion promoters (Ti, Cr, Al, Ta, WTi), diffusion barriers (TiN, Ta, WTi), and the final copper layer have been tested by peel-tests. For investigating the electrical interactions TLM measurements as well as leakage-current measurements have been done on copper metalized SiC samples.
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