This study empirically investigates the influences of several parameters on surface morphology and etch rate in a high-aspect-ratio silicon etching process. Two function formulas were obtained, revealing the relationship between the controlled parameters and the etching results. All the experiments were conducted on an inductively coupled plasma system, using a Bosch process. The tested trenches' width ranged from 15 to 1500 mm and their depth ranged from 50 to 500 mm, which covers nearly all the typical sizes of micromechanical devices in practical applications. The controlled parameters are etching chamber pressure, bias power, and gas flow rate. The parameters of surface morphology include sidewall angle, surface roughness, and sidewall condition. We tested how the controlled parameters can influence the surface morphology and etch rate and formulated assumptions to explain those relationships. Meanwhile, we utilized linear regression to obtain experiential function formulas of the relationships among etch depth, structure width, etching time, and passivation time, with a correlation coefficient higher than 0.99. Using these formulas, 12-mm-wide and 377-mm-deep (aspect ratio 31.4) trenches with sidewall angles of 89°were achieved. Additionally, this experience was applied as a critical structure in a gas turbine structure system.

In this study, the filling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was efficiently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations. Designed control variable experiments were conducted to determine the optimized method. In the control variable experiments, the relationship of multiple experimental variables, including current density (0.25–2 A/dm2), additive concentration (0.5–2 mL/L), and different shapes of TSVs (circle, oral, and square), were systematically analyzed. Considering the electroplating speed and quality, the influence of different factors on experimental results and the optimized parameters were determined. The results showed that increasing current density improved the electroplating speed but decreased the quality. Additives worked well, whereas their concentrations were controlled within a suitable range. The TSV shape also influenced the electroplating result. When the current density was 1.5 A/dm2 and the additive concentration was 1 mL/L, the TSV filling was relatively better. With the optimized parameters, 500-μm-deep TSVs with a high aspect ratio of 10:1 were fully filled in 20 h, and the via density reached 70/mm2. Finally, optimized parameters were adopted, and the electroplating of 1000-μm-deep TSVs with a diameter of 100 μm was completed in 45 h, which is the deepest and smallest through which a three-dimensional inductor has ever been successfully fabricated.

This paper presents a micro electromagnetic vibration energy harvester (VEH) that uses complementary metal-oxide-semiconductorcompatible 3D micro-electromechanical system coils and a ferromagnetic core to improve efficiency and output power. A systematic model is proposed to describe the nonlinear electromagnetic damping coefficient and nonlinear attraction between the magnet and the ferromagnetic core. The nonlinear model agrees well with the finite element calculation results. Then, a vibration model is established by considering nonlinear stiffness and damping coefficient to obtain the dynamic characteristics and output performance of the system. Furthermore, a numerical method is conducted to systematically investigate the influence of air gap and initial magnet offset under different excitation amplitudes. The simulation results indicate that with a smaller air gap, the output power is higher. Moreover, there is an optimal initial magnet offset in relation to the air gap to maximise the output power of the system. These conclusions and analysis models can be generalised and can be used as a guidance for the designs of similar structural devices. The results also show that the structure proposed in this study can significantly enhance the energy harvesting performance compared with published data of conventional VEHs.

In this letter, we report the design and measurement of a 3D solenoid inductor that is embedded in a Si substrate and can integrate an iron core. Various inductor designs were fabricated with good structural integrity and repeatability via a CMOS-compatible MEMS fabrication process. The average inductance and quality factor peakto-peak variation of the inductors was below 10%, which indicates that the fabrication process is repeatable. Among the inductors without iron cores, the highest quality factor (37.6 at 21 MHz) was found in a 5-turn inductor, and the highest inductance and inductance density (respectively, 86.6 nH and 21.7 nH/mm 2 ) were found in a 20-turn inductor. Among the iron-core inductors, the 15-turn inductor had an inductance of 1063 nH and an inductance density of 354.3 nH/mm 2 , nearly 18 times higher than the same design without an iron core, which is the highest inductance density for a MEMS microinductor to the best of our knowledge. This type of inductor is an important component in RF MEMS and electromagnetic power MEMS devices and can improve their performance and efficiency.

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The focus of this study is on the manufacturing of micro air bearings (MABs) using silica film assisted processing. Structure of the three-layer micro air bearing is described in detail and the salient process flow of etching and bonding is illustrated. The main manufacturing challenges and the methods adopted to overcome them are also presented. The uniformity of wet etching for nozzles with 20 μm in diameter to silica film is improved by adopting an ultrasound assisted method. Particular attention is given to the novel fabrication procedures for the second layer of MAB (with three depths on aft side). This paper develops new applications of silica film in Micro Electro Mechanical System (MEMS) processing for MABs to realize the etching of multi-depth on the same side and efficient three-layer bonding with increased bonding areas. A silica etch mask is proven to achieve a higher accuracy in surface topography when compared to a photoresist mask for multi-depth etching, resulting in precise depth and vertical control. The bonding rate of three-layer direct bonding for MAB is increased by 50% from 0.05 to 0.1 with the novel silica film protection method.

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Ionic liquid ion sources have been proposed as a new type of ion source for focused ion beam and broad ion beam applications. In this paper, the ionic liquid EMI-BF4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was used as an ion source to generate negatively charged ions and irradiate glass (Pyrex 7740), silicon, and silicon dioxide targets. The results indicate that negative EMI-BF4 ion beams can prevent issues related to surface charge accumulation on dielectric substrates, achieving etching selectivities of SiO2:Si of at least 1.55. The etching rate increases on glass, silicon, and silicon dioxide at higher ion landing energies. It is shown that the negative EMI-BF4 beam has a higher yield than traditional metal gallium ion beams, likely due to the chemical reactivity of fluorine radicals. This effect is also noticeable when compared to results using positive EMI-BF4 beams.