The passivation of silicon surfaces to anisotropic etches by ion and electron beams is demonstrated. The mechanisms for passivation is attributed to oxide growth induced by lattice damage and strain. Its application as a maskless etch process or etch stop for fabrication of nonplanar microstructures is discussed.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.