We demonstrate that deviations from 1/ f noise behavior found in submicron silicon metal-oxide-semiconductor field-effect transistors operating at room temperature are the direct result of the decomposition of the 1/ f spectrum into its constituent Lorentzian components. In the time domain, these devices produce random telegraph signals due to localized and discrete modulations of the channel resistance caused by individual carrier trapping events.

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Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.