We demonstrate four- and two-terminal perovskite-perovskite tandem solar cells with ideally matched band gaps. We develop an infrared-absorbing 1.2-electron volt band-gap perovskite, FACsSnPbI, that can deliver 14.8% efficiency. By combining this material with a wider-band gap FACsPb(IBr) material, we achieve monolithic two-terminal tandem efficiencies of 17.0% with >1.65-volt open-circuit voltage. We also make mechanically stacked four-terminal tandem cells and obtain 20.3% efficiency. Notably, we find that our infrared-absorbing perovskite cells exhibit excellent thermal and atmospheric stability, not previously achieved for Sn-based perovskites. This device architecture and materials set will enable "all-perovskite" thin-film solar cells to reach the highest efficiencies in the long term at the lowest costs.

Mixed lead-tin triiodide perovskites are promising absorber materials for low band-gap bottom cells in all-perovskite tandem photovoltaic devices. Key structural and electronic properties of the FAPb1-xSnxI3 perovskite are presented here as a function of lead:tin content across the alloy series. Temperature-dependent photoluminescence and optical absorption measurements are used to identify changes in the band-gap and phase transition temperature.The large band-gap bowing parameter, a crucial element for the attainment of low band-gaps in this system, is shown to depend on the structural phase, reaching a value of 0.84 eV in the low-temperature phase and 0.73 eV at room temperature. The parabolic nature of the bowing at all temperatures is compatible with a mechanism arising from bond bending to accommodate the random placement of unevenly sized lead and tin ions. Charge-carrier recombination dynamics are shown to fall into two regimes. Tin-rich compositions exhibit fast, mono-exponential recombination that is almost temperature independent, in accordance with high levels of electrical doping. Lead-rich compositions show slower, stretchedexponential charge-carrier recombination that is strongly temperature-dependent, in accordance with a multi-phonon assisted process. These results highlight the importance of structure and composition for control of band-gap bowing and charge-carrier recombination mechanisms in low band-gap absorbers for all-perovskite tandem solar cells.

By correlating photovoltaic and material properties with metal content, we identify compositional ranges of low and high optoelectronic quality in (FA0.83Cs0.17)(Pb1−ySny)I3 perovskites.

Hybrid metal-halide perovskites have potential as cost-effective gain media for laser technology because of their superior optoelectronic properties. Although lead-halide perovskites have been most widely studied to date, tin-based perovskites have been proposed as a less toxic alternative. In this Letter, we show that amplified spontaneous emission (ASE) in formamidinium tin triiodide (FASnI3) thin films is supported by an observed radiative monomolecular charge recombination pathway deriving from its unintentional doping. Such a radiative component will be active even at the lowest charge-carrier densities, opening a pathway for ultralow light-emission thresholds. Using time-resolved THz photoconductivity analysis, we further show that the material has an unprecedentedly high charge-carrier mobility of 22 cm2 V–1 s–1 favoring efficient transport. In addition, FASnI3 exhibits strong radiative bimolecular recombination and Auger rates that are over an order of magnitude lower than for lead-halide perovskites. In combination, these properties reveal that tin-halide perovskites are highly suited to light-emitting devices.

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