2016
DOI: 10.1021/acs.jpclett.6b02030
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Radiative Monomolecular Recombination Boosts Amplified Spontaneous Emission in HC(NH2)2SnI3 Perovskite Films

Abstract: Hybrid metal-halide perovskites have potential as cost-effective gain media for laser technology because of their superior optoelectronic properties. Although lead-halide perovskites have been most widely studied to date, tin-based perovskites have been proposed as a less toxic alternative. In this Letter, we show that amplified spontaneous emission (ASE) in formamidinium tin triiodide (FASnI3) thin films is supported by an observed radiative monomolecular charge recombination pathway deriving from its uninten… Show more

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Cited by 118 publications
(140 citation statements)
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“…The perovskite film has a large average grain size (≈500 nm) and can densely cover the substrate with good uniformity, which is beneficial for charge transport in the PD. [35,36] Such high mobility further confirms the high quality of the film and is desirable for carrier transport in PDs. As shown in Figure 1d, the sample displayed a sharp PL peak and an absorbance edge at around 890 nm, indicating its direct bandgap of ≈1.4 eV.…”
Section: Doi: 101002/advs201900751mentioning
confidence: 56%
“…The perovskite film has a large average grain size (≈500 nm) and can densely cover the substrate with good uniformity, which is beneficial for charge transport in the PD. [35,36] Such high mobility further confirms the high quality of the film and is desirable for carrier transport in PDs. As shown in Figure 1d, the sample displayed a sharp PL peak and an absorbance edge at around 890 nm, indicating its direct bandgap of ≈1.4 eV.…”
Section: Doi: 101002/advs201900751mentioning
confidence: 56%
“…Notably, Milot et al found a small Auger recombination rate constant (0.93 × 10 −29 cm 6 s −1 ) in tin‐based perovskite (FASnI 3 ). This value is an order of magnitude smaller than that reported for lead‐based perovskites (in Figure c) . Such small Auger rate will benefit the tin‐based perovskites for coherent light emission at relative high injected carrier density.…”
Section: Carrier Dynamics In Metal Halide Perovskite Lasersmentioning
confidence: 58%
“…Copyright 2017, Nature Publishing Group. (c) Reproduced with permission . Copyright 2016, American Chemical Society.…”
Section: Carrier Dynamics In Metal Halide Perovskite Lasersmentioning
confidence: 99%
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“…The recombination process in Sn‐based perovskites under illumination can be described using the following equation normald n normald t = k 1 nr n k 2 n false( p + p 0 false) k 3 n 3 = false( k 1 nr + k 2 p 0 false) n k 2 n 2 k 3 n 3 = k 1 n k 2 n 2 k 3 n 3 where n and p are the densities of photo‐generated electrons and holes, respectively, p 0 is the hole doping density, k 1 nr is the nonradiative monomolecular recombination rate constant, k 2 is the bimolecular recombination rate constant (in the order of 10 −10 –10 −9 cm 3 s −1 , see Table ), k 3 is the Auger recombination rate constant (in the order of 10 −30 cm 6 s −1 ), and k 1 = k 1 nr + k 2 p 0 is the total rate constant of monomolecular recombination. It is special for Sn‐based perovskites that monomolecular recombination has contributions not only from nonradiative, trap‐assisted monomolecular recombination ( k 1 nr n ) but also from the radiative, pseudo‐monomolecular recombination between photo‐generated electrons and dopant holes density ( k 2 p 0 n ) as p 0 is very high . The reported value of k 1 for Sn‐based polycrystalline films is in the order of 10 8 –10 9 s −1 (Table ), which is several orders of magnitude higher than the typical values for MAPbI 3 .…”
Section: Structures and Properties Of Sn‐based Perovskitementioning
confidence: 94%