No abstract

In this topical review, the recent progress on radiation-hardened fiber-based technologies is detailed, focusing on examples for space applications. In the first part of the review, we introduce the operational principles of the various fiber-based technologies considered for use in radiation environments: passive optical fibers for data links, diagnostics, active optical fibers for amplifiers and laser sources as well as the different classes of point and distributed fiber sensors: gyroscopes, Bragg gratings, Rayleigh, Raman or Brillouin-based distributed sensors. Second, we describe the state of the art regarding our knowledge of radiation effects on the performance of these devices, from the microscopic effects observed in the amorphous silica glass used to design fiber cores and cladding, to the macroscopic response of fiber-based devices and systems. Third, we present the recent advances regarding the hardening (improvement of the radiation tolerance) of these technologies acting on the material, device or system levels. From the review, the potential of fiber-based technologies for operation in radiation environments is demonstrated and the future challenges to be overcome in the coming years are presented.

Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.