No abstract

A simplified Cu(In, Ga)Se2 (CIGS) solar cell structure based on a 500 nm thin CIGS layer is presented. The absorber layers are grown with a single-stage co-evaporation process and various KF post deposition treatments (KF-PDT) are performed. The KF-PDT leads to an efficiency increase from 7% to 12%. For all cells an increase in open circuit voltage (Voc) and fill factor is measured, which is attributed to an improved pn junction. By changing the annealing conditions an additional Voc increase is measured. This increase is attributed to the reduction of light induced defects at the CIGS/CdS interface in addition to the improved pn junction. A reduction of defects is confirmed by reduced sub band gap emission in the photoluminescence spectra, an increased decay time and increased quasi fermi level splitting. With SCAPS the results are simulated and it is concluded that after KF-PDT the Voc is limited to 640 mV due to recombination at the back contact. A higher Voc can then only be achieved by applying a passivation layer at the back. There are no indications that the single-stage process is limiting the efficiency revealing the potential of the proposed simplified CIGS structure and the importance of interfaces for ultrathin CIGS solar cells.