Dislocation microstructures induced by plastic deformation at room
temperature in Si have been investigated by TEM. Plastic deformation has
been obtained by using two types of technique: deformation under a
confining pressure of 5 GPa in an anisotropic multi-anvil apparatus and by
surface scratching. The TEM observations show common features in the two
deformation substructures which are characteristic of high stress-low
temperature deformation. The deformation microstructures are built with
dislocations with a/2⟨110⟩ Burgers vector in (111) planes
which are undissociated. Such dislocations are mainly aligned along the
screw orientation and ⟨112⟩ orientations at 30° from
the Burgers vectors as well as along ⟨132⟩ orientations at
41° from the Burgers vector. The occurrence of those Peierls valleys
confirms that different dislocation core configurations from those usually
dealt with at higher temperatures have to be taken into account when
dislocations are nucleated at very high stresses.
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