This paper presents a damascene process for the fabrication of titanium micro/nanostructures and nanowires with adjustable thickness down to 2 nm. Their depth is precisely controlled by chemical-mechanical planarization together with in-process electrical characterization. The latter, in combination with a model of the titanium resistivity versus thickness, allows control of the metal line depth in the nanometer range. In summary, we have developed a planarization end point detection method for metal nanostructures. In addition, the model adopted covers geometrical influences like oxidation and ageing. The fabricated titanium nanowire test structures have a thickness ranging from 2 to 25 nm and a width ranging between 15 and 230 nm.
Portable and highly sensitive Raman setup was associated with a plasma-enhanced chemical vapor deposition reactor enabling in situ growth monitoring of multi-wall carbon nanotubes despite the combination of huge working distance, high growth speed and process temperature and reactive plasma condition. Near Edge X-ray absorption fine structure spectroscopy was used for ex situ sample analysis as a complementary method to in situ Raman spectroscopy. The results confirmed the fact that the “alternating” method developed here can accurately be used for in situ Raman monitoring under reactive plasma condition. The original analytic tool can be of great importance to monitor the characteristics of these nanostructured materials and readily define the ultimate conditions for targeted results.
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