An analytical band Monte Carlo (AMC) with linear energy band dispersion has been developed to study the electron transport in suspended silicene and silicene on aluminium oxide (Al 2 O 3) substrate. We have calibrated our model against the full band Monte Carlo (FMC) results by matching the velocity-field curve. Using this model, we discover that the collective effects of charge impurity scattering and surface optical phonon scattering can degrade the electron mobility down to about 400 cm 2 V −1 s −1 and thereafter it is less sensitive to the changes of charge impurity in the substrate and surface optical phonon. We also found that further reduction of mobility to ∼100 cm 2 V −1 s −1 as experimentally demonstrated by Tao et al (2015 Nat. Nanotechnol. 10 227) can only be explained by the renormalization of Fermi velocity due to interaction with Al 2 O 3 substrate.
Using analytical band Monte Carlo approach, we have carried out a systematic study on the effects of carrier concentrations on the steady-state and transient electron transports that occur within a monolayer silicene. In particular, we have observed the following: First at steady-state, the electron mobility reduces with higher carrier concentrations. Secondly, in the transient regime we found that the drift velocity overshoot can be controlled by varying the carrier concentrations. We uncover that at carrier concentration of 1 × 1013 cm−2, the drift velocity overshoot can reach up to 3.8 × 107 cm s−1 which is close to the steady-state drift velocity saturation of graphene. Thirdly, the distance of the velocity over shoot can be further extended with higher carrier concentrations. Our findings could be useful and can be used as benchmark for future development of nanoscale silicene based devices.
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