Effects of carrier concentrations on the charge transport properties in monolayer silicene

Abidin, B. I.; Yeoh, Keat Hoe; Ong, Duu Sheng; Yong, Thian-Khok

doi:10.1088/1361-6463/aa8949

Cited by 10 publications

(14 citation statements)

References 30 publications

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“…In this sub-section, we obtain the various transport parameters such as transmission, current, resistance and gauge factor as a function of the transport-angle and applied strain along the AC and ZZ directions in the quasiballistic transport regime (since the mean free path of silicene is around 20 nm [29]).…”

Section: B Directional Piezoresistance Calculationmentioning

confidence: 99%

“…Despite these advantages, straintronics application of silicene remains unexplored. In this paper, we explore the straintronics properties of silicene in the quasi-ballistic transport regime (which corresponds to a length-scale of around 100 nm -200 nm) [29] for potential applications in future NEMS systems and flexible electronic devices.Various 2D materials with enhanced electrical, optical and mechanical properties like graphene, display novel applications in NEMS systems such as reference piezoresistor [22] and ultra high-pressure sensitivity [23,30,31]. Because of the similarities between silicene and graphene, the former is expected to contribute to the field of NEMS sensors.…”

Section: Introductionmentioning

confidence: 99%

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Silicene for flexible electronics

Sahoo¹,

Sinha²,

Koshi³

et al. 2022

Preprint

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The outstanding properties of graphene have laid the foundation for exploring graphene-like twodimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoretical model derived from the integration of ab-initio density-functional theory and quantum transport theory, we investigate the piezoresistance effect of silicene in the nanoscale regime. Like graphene, we obtain a small value of piezoresistance gauge factor of silicene, which is sinusoidally dependent on the transport angle. The small gauge factor of silicene is attributed to its robust Dirac cone and strain-independent valley degeneracy. Based on the obtained results, we propose to use silicene as an interconnect in flexible electronic devices and a reference piezoresistor in strain sensors. This work will hence pave the way for exploring flexible electronics applications in other 2D-Xene materials.

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Section: B Directional Piezoresistance Calculationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicene for flexible electronics

Sahoo¹,

Sinha²,

Koshi³

et al. 2022

Preprint

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show abstract

“…In this paper, we delve into the strained lattice structure of monolayer 2D-Xenes in a quasi-ballistic regime, which corresponds to a length scale of around 100−200 nm. 26 The corresponding results are compared keeping in mind different nano-electro-mechanical systems (NEMS) applications and possible flexible electronics applications, which are pretty diverse, satisfying the fundamental criterion of robust electronic and excellent mechanical response to strain, 27 followed by portability and manufacturability. 28 The central goal of this paper is to compare the monolayer Xenes based on their fundamental properties, band structures, and transport properties, in the presence of strain and explore different applications of Xenes like piezoresistivity and conductance modulation using ab initio density functional theory (DFT) and the quantum transport approach.…”

Section: Introductionmentioning

confidence: 99%

“…Despite the benefits outlined above, their respective applications in straintronics remain unexplored. In this paper, we delve into the strained lattice structure of monolayer 2D-Xenes in a quasi-ballistic regime, which corresponds to a length scale of around 100–200 nm . The corresponding results are compared keeping in mind different nano-electro-mechanical systems (NEMS) applications and possible flexible electronics applications, which are pretty diverse, satisfying the fundamental criterion of robust electronic and excellent mechanical response to strain, followed by portability and manufacturability …”

Section: Introductionmentioning

confidence: 99%

Density Functional Theory of Straintronics Using the Monolayer-Xene Platform: A Comparative Study

Sahoo,

Koshi,

Lee

et al. 2024

ACS Appl. Nano Mater.

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Monolayer silicene is a front runner in the twodimensional (2D)-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab initio density functional theory (DFT) coupled with quantum transport based on the Landauer formalism. With a rigorous band structure analysis, we show the effect of strain on the K-point and calculate the directional piezoresistances for the buckled Xenes as per their critical strain limit. Further, we compare the relevant gauge factors (GFs) and their sinusoidal dependencies on the transport angle akin to those of silicene and graphene. The straininsensitive transport angles corresponding to the zero gauge factors for silicene and germanene are 81 and 34°for armchair (AC) and zigzag (ZZ) strains, respectively. As the strain limit is increased to 10% in stanene, there are notable changes in the fundamental parameters, which entail a change in the critical angle along the armchair (69°) and zigzag (34°) directions. The small values of gauge factors can be attributed to their stable Dirac cones and strain-independent valley degeneracies. We also explore conductance modulation, which is quantized in nature and exhibits a variation pattern similar to that of other transport parameters against applied strain. Based on the obtained results, we propose the buckled Xenes as an interconnect in flexible electronics and that they are promising candidates for various applications in straintronics.

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“…Therefore, the four transitions in monolayer TMDCs could be divided into two pairs, K↑ (K ↓) and K↓ (K ↑) because of their spin-valley coupling. Although rigorous study of the valley and spin-polarized transport [19][20][21][22][23] and electrical transport [32][33][34][35][36] properties are underway in silicene and in germanene [37], the MOAC has been not addressed in these materials yet. It is expected that the MOAC in these materials to be fairly different from that in TMDCs due to different band structure.…”

Section: Introductionmentioning

confidence: 99%

Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fields

et al. 2020

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We study the optical absorption properties of silicene and germanene in the presence of the perpendicular magnetic and electric fields. Their low-energy Landau level (LL) spectra are controllable by an external electric field, where the spin-and valley-degeneracy of the LLs are strongly influenced by the electric and Zeeman fields. The electric field has removed spin-degeneracy at a given valley. Analytical expressions for the magneto-optical absorption coefficient (MOAC) are expressed in the presence of the interaction between carriers and random impurities and the intrinsic phonons including the spin and valley effects. The results evaluated for the topological insulator and valley-spin-polarized metal phases showed that when the electric field is included, the MOAC peaks are separated for opposite spin cases where the splitting in germanene is stronger than that in silicene. The peak's intensity caused by the carrier-photon-impurity scattering is the highest, the next is the carrier-photon scattering, while the carrier-photon-phonon scattering shows the lowest in both materials. Among the different phonon modes, the out-of-plane (ZA) mode in silicene dominates the others, being attributed to its buckled atomic structure, which does not exist in graphene. When the ZA mode is taken into account, the estimated resultant mobility from the full-width at half-maximum is significantly supported by the experimental result in silicene.

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Effects of carrier concentrations on the charge transport properties in monolayer silicene

Cited by 10 publications

References 30 publications

Silicene for flexible electronics

Silicene for flexible electronics

Density Functional Theory of Straintronics Using the Monolayer-Xene Platform: A Comparative Study

Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fields

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