Measuring the level of hydrophilicity of heterogeneous surfaces and the true height of water layers that form on them in hydrated conditions has a myriad of applications in a wide range of scientific and technological fields. Here, we describe a true non-contact mode of operation of atomic force microscopy in ambient conditions and a method to establish the source of apparent height. A dependency of the measured water height on operational parameters is identified with water perturbations due to uncontrolled modes of imaging where intermittent contact with the water layer, or even the surface, might occur. In this paper we show how to (1) determine when the water is being perturbed and (2) distinguish between four different interaction regimes. Each of the four types of interaction produces measurements ranging from fractions of the true height in one extreme to values which are as large as four times the real height in the other. We show the dependence of apparent height on the interaction regime both theoretically and empirically. The agreement between theory and experiment on a BaF2(111) sample displaying wet and un-wet regions validates our results.
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s)
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.