Excess noise in amorphous Selenium avalanche photodiodes (a-Se APD) has been measured in a frequency range from 3 kHz to 30 kHz. The deduced excess noise factors, including dependences on photocurrent, frequency, applied electric field and the a-Se layer's thickness, agreed with McIntyre's theoretical values.
We studied the electrophoretic migrations of submicron particles in nonpolar inks sealed in narrow gap cells of 5.3 mm by using optical and current responses. We evaluated the mobility of particles by using the optical responses of the total reflection at interfaces between electrodes and the solvent in addition to simultaneously measuring current, from which the concentrations of ions and charged particles were analyzed. The mobility of the particles in the narrow gap was similar to that of the bulk ink, except for the case with no charge director and less dependence on the charge director concentration. We also analyzed how the mobility was distributed and how the particles interacted with the interface by using the optical responses. #
We have developed thin, durable and flexible, metal substrates for a‐Si TFT active matrix displays. Fine‐patterned a‐Si TFTs can be fabricated using an Fe‐Ni 42 alloy metal foil with a low coefficient of thermal expansion as the flexible substrate. The metal foil is coated using a heat‐resistant polymer passivation layer, so that a conventional a‐Si TFT process, where the maximum substrate temperature is 300 °C, can be applied. A 0.29mm‐thick 200ppi 4″ VGA reflective LCD panel was realized using a 0.16mm thick metal substrate.
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