Raman scattering and photoluminescence (PL) under near-UV excitations were used to assess the 6H-Sic films epitaxied on GH-Sic by low pressure vertical chemical vapour deposition (LPV-CVD). Raman linewidths and relative intensities with respect to the PL emissions were used to characterize the quality of the 6H-SIC films. Ti-related PL and outgoing resonance Raman scattering were studied. Samples grown by LPV-CVD with different growth parameters were compared on the basis of their Raman-PL spectra. This study showed that a combination of Raman and PL measurements can be used as a convenient method to assess the GH-SiC/GH-SIC homoepitaxial structures.
The dependence of the magnetic properties, crystallographic structure, morphological structure and recording characteristics on the angle of incidence were studied on the obliquely evaporated thin Co-O films. The preferred c-axis orientation angle of Co in Co-O films is almost equal to the minimum incident angle( e min), because the growth at the initial deposition stage around the maximum incident angle( emax) is very thin and has little magnetization due to oxidization. The Co-O film deposited at emin of 40· exhibits a maximum output at a recording density of 100kFCI, which is higher by 5dB than that of ME tape for a high-band 8mm VCR.
The effects of the residual gas pressure on the magnetic properties of CO-0 films were studied The coercivity(Hc) and squareness ratio(MrlMs) decreased with increasing the residual gas pressure. Among the species, water vapor played a decisive role in degrading the magnetic properties. Analysis revealed that the degradation was caused by decrease in the anisotropy fieM(Hk) and increase in the easy axis angle( a ) of the film. These changes in Hh and by water vapor can be explained qualitatively.
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