A fused tris(thienothiophene) (3TT) building block is designed and synthesized with strong electron-donating and molecular packing properties, where three thienothiophene units are condensed with two cyclopentadienyl rings. Based on 3TT, a fused octacylic electron acceptor (FOIC) is designed and synthesized, using strong electron-withdrawing 2-(5/6-fluoro-3-oxo-2,3-dihydro-1H-inden-1-ylidene)-malononitrile as end groups. FOIC exhibits absorption in 600-950 nm region peaked at 836 nm with extinction coefficient of up to 2 × 10 m cm , low bandgap of 1.32 eV, and high electron mobility of 1.2 × 10 cm V s . Compared with its counterpart ITIC3 based on indacenothienothiophene core, FOIC exhibits significantly upshifted highest occupied molecular orbital level, slightly downshifted lowest unoccupied molecular orbital level, significantly redshifted absorption, and higher mobility. The as-cast organic solar cells (OSCs) based on blends of PTB7-Th donor and FOIC acceptor without additional treatments exhibit power conversion efficiencies (PCEs) as high as 12.0%, which is much higher than that of PTB7-Th: ITIC3 (8.09%). The as-cast semitransparent OSCs based on the same blends show PCEs of up to 10.3% with an average visible transmittance of 37.4%.
To take advantages of the intense absorption and fluorescence, high charge mobility, and high dielectric constant of CsPbI3 perovskite quantum dots (PQDs), PQD hybrid nonfullerene organic solar cells (OSCs) are fabricated. Addition of PQDs leads to simultaneous enhancement of open‐circuit voltage (VOC), short‐circuit current density (JSC), and fill factor (FF); power conversion efficiencies are boosted from 11.6% to 13.2% for PTB7‐Th:FOIC blend and from 15.4% to 16.6% for PM6:Y6 blend. Incorporation of PQDs dramatically increases the energy of the charge transfer state, resulting in near‐zero driving force and improved VOC. Interestingly, at near‐zero driving force, the PQD hybrid OSCs show more efficient charge generation than the control device without PQDs, contributing to enhanced JSC, due to the formation of cascade band structure and increased molecular ordering. The strong fluorescence of the PQDs enhances the external quantum efficiency of the electroluminescence of the active layer, which can reduce nonradiative recombination voltage loss. The high dielectric constant of the PQDs screens the Coulombic interactions and reduces charge recombination, which is beneficial for increased FF. This work may open up wide applicability of perovskite quantum dots and an avenue toward high‐performance nonfullerene solar cells.
Two new A−D−A small-molecule donors (C8T-BDTDP and C8ST-BDTDP) are prepared from benzodithiophene (BDT)-linked dimeric porphyrin (DP), which differ in side chains of BDT linkers with 4,thiophen-2-yl]benzo [1,2-b:4,5-b′]dithiophene (C8T-BDT) for the former and 4,8-bis{5-[(2-ethylhexyl)thio]-2-thienyl}benzo[1,2-b:4,5-b′]dithiophene (C8ST-BDT) for the latter. Both dimeric porphyrin donors show strongly UV−visible to near-infrared absorption. Compared to C8T-BDTDP, C8ST-BDTDP with an alkylthiothienyl-substituted BDT linker exhibits more intense absorption bands in the film and a lower highest occupied molecular orbital energy level. The blend film of the electron acceptor 6TIC with the respective dimeric porphyrin donor displays a broad photon response from 400 to 900 nm, unfortunately, with an absorption valley at ca. 600 nm. The device based on C8ST-BDTDP/6TIC demonstrates a promising power conversion efficiency (PCE) of 10.39% with a high short-circuit current density (J SC ) of 19.53 mA cm −2 , whereas the device based on C8T-BDTDP/6TIC shows a slightly lower PCE of 8.73% with a J SC of 17.75 mA cm −2 . The better performance for C8ST-BDTDP/6TIC is mainly attributed to efficient charge dissociation and transportation because of the smooth surface morphology and highly ordered crystalline packing.
High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity ( D * ) over 10 12 Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10 12 Jones at 1.02 μm, which is the highest D * for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D * in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs.
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