An experimental switching device is described that has thefollowing properties: (a) sealed metallic contacts, (b) control times in themicrosecond range, (c) coincident selection, (d) memory without holding power and (e) small size. The device, named theferreed, may beused as a crosspoint in telephone switching networks of the space-separation type. The development oj the ferreed is traced from a conceptual model, through realization oj a practical model, to possible applications in switching networks. Two methods of coincident control are discussed, and three devices related to the conceptual jerreed are described briefly.
A direct bit leakage measurement (DBLM) scheme is proposed and implemented in 8Mb and 32Mb SRAM’s in 45nm and 28nm technologies. It allows, for the first time, direct and nondestructive measurement of various defect induced leakages in each bit in a functional SRAM. It thus enables collection of various defect induced bit leakage data for low-cost and fast failure analysis. It also enables collection of massive bit leakage data for statistical evaluation and location sensitivity assessment.
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