The strain-free Raman shift of the Ge–Ge mode, , of Ge-rich Si1−xGex (x: Ge fraction) was determined accurately from the bulk Ge-rich Si1−xGex samples fabricated by the Czochralski (Cz) method. Using the obtained , the phonon deformation potentials (PDPs), p and q, and the strain-shift coefficient bLO of isotropic biaxial strained Ge-rich Si1−xGex thin films were extracted by oil-immersion Raman spectroscopy using Raman peak shifts of longitudinal and transverse optical (LO and TO) phonon modes. As a result, it was confirmed that these parameters are almost constant with small variations and that the strain-shift coefficient bLO is in good agreement with ab initio calculations. The parameters determined in this work are essential to realize accurate strain measurements using Raman spectroscopy for Ge-rich Si1−xGex devices.
We evaluated the anisotropic three-dimensional strain relaxation in the patterned Ge1-xSnx mesa structure by Raman spectroscopy and X-ray diffraction(XRD). The strain states in the channel region change complicatedly depending on the channel shape. Therefore, accurate strain evaluation technique is strongly desired. In this study, measurements were carried out using a thin Ge1-xSnx film grown epitaxially on a Ge substrate by metal organic chemical vapor deposition (MOCVD). After growing the epitaxial film, a stripe-shaped mesa structures simulating the channel shape were fabricated. From the results of Raman spectroscopy and XRD, strain relaxation was confirmed at pattern width W = 0.2 μm or less in the in-plane minor axis and the out-of-plane direction.
SiGe channel is widely used because carrier mobilities of SiGe arehigher than those of Si. C or Ge ion implantation in the source/drainregion is expected to be effective to induce tensile or compressivestrain, respectively, in the SiGe channel. Laser annealing enables toremove lattice damage efficiently with minimum thermal budget. Inthis study, laser-annealed SiGe thin layers with and without C or Geimplantation were evaluated by Raman spectroscopy and X-rayPhotoelectron Spectroscopy (XPS). We demonstrated the effect ofC or Ge implantation as well as Ge redistribution by the laserannealing on the Raman peak shift.
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