We demonstrate the relationship between Raman shift ω and temperature T (dω/dT) of silicon-germanium (SiGe) for Si-Si, Si-Ge, and Ge-Ge vibration modes which should be useful in local temperature evaluation of SiGe devices at submicron levels. We investigated the dω/dT of single-crystalline SiGe for Si-Si, Si-Ge, and Ge-Ge vibration modes and its dependence on the Ge fraction using variable-temperature Raman spectroscopy. We clarified that the (dω/dT)s for Si-Si, Si-Ge, and Ge-Ge are fairly constant for all single-crystalline SiGe samples. Therefore, the anharmonic vibration of Si-Si, Si-Ge, and Ge-Ge modes has no Ge-fraction dependence in SiGe. The peak shifts help define the temperature on the submicron-scale surface.
Carbon-doped silicon (Si:C) is used in the source and drain region as a stressor to the channel of n-type metal oxide semiconductor field-effect-transistor (MOSFET). In this study, we evaluated the anisotropic biaxial strain of the patterned Si:C modeled for actual devices using water-immersion Raman spectroscopy. As a result, it was confirmed that the tensile strain and stress applied to the Si:C film was relaxed by nano-fabrication. Furthermore, it was found that the stress relaxation state differed depending on the C concentration.
We evaluated the thermal expansion coefficients in germanium tin (Ge1
-
x
Sn
x
) nanowire and blanket (un-patterned) film formed on Ge (001) substrate by X-ray diffraction measurement with synchrotron radiation. It was found that the thermal expansion coefficients of Ge0.968Sn0.032 are different in directions between parallel and normal to Ge substrate surface. Effect on anisotropy of lattice parameters on the anisotropic thermal expansion coefficient of Ge0.968Sn0.032 is also clarified, and the largest anisotropy was observed in blanket film.
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