Magnetic particles that can be precisely controlled under a magnetic field and transduce energy from the applied field open the way for innovative cancer treatment. Although these particles represent an area of active development for drug delivery and magnetic hyperthermia, the in vivo anti-tumor effect under a low-frequency magnetic field using magnetic particles has not yet been demonstrated. To-date, induced cancer cell death via the oscillation of nanoparticles under a low frequency magnetic field has only been observed in-vitro. In this report, we demonstrate the successful use of spin-vortex, disk-shaped permalloy magnetic particles in a low-frequency, rotating magnetic field for the in vitro and in vivo destruction of glioma cells. The internalized nanomagnets align themselves to the plane of the rotating magnetic field, creating a strong mechanical force which damages the cancer cell structure inducing programmed cell death. In vivo, the magnetic field treatment successfully reduces the brain tumor size and increases the survival rate of mice bearing intracranial glioma xenografts, without adverse side effects. This study demonstrates the novel approach of controlling magnetic particles for treating malignant glioma that should be applicable to treat a wide range of cancers.

We report low-hysteresis, ambipolar bottom gold contact, colloidal PbSe nanowire (NW) field-effect transistors (FETs) by chemically modifying the silicon dioxide (SiO(2)) gate dielectric surface to overcome carrier trapping at the NW-gate dielectric interface. While water bound to silanol groups at the SiO(2) surface are believed to give rise to hysteresis in FETs of a wide range of nanoscale materials, we show that dehydration and silanization are insufficient in reducing PbSe NW FET hysteresis. Encapsulating PbSe NW FETs in cured poly(methyl) methacrylate (PMMA), dehydrates and uniquely passivates the SiO(2) surface, to form low-hysteresis FETs. Annealing predominantly p-type ambipolar PbSe NW FETs switches the FET behavior to predominantly n-type ambipolar, both with and without PMMA passivation. Heating the PbSe NW devices desorbs surface bound oxygen, even present in the atmosphere of an inert glovebox. Upon cooling, overtime oxygen readsorption switches the FET polarity to predominantly p-type ambipolar behavior, but PMMA encapsulation maintains low hysteresis. Unfortunately PMMA is sensitive to most solvents and heat treatments and therefore its application for nanostructured material deposition and doping is limited. Seeking a robust, general platform for low-hysteresis FETs we explored a variety of hydroxyl-free substrate surfaces, including silicon nitride, polyimide, and parylene, which show reduced electron trapping, but still large hysteresis. We identified a robust dielectric stack by assembling octadecylphosphonic acid (ODPA) on aluminum oxide (Al(2)O(3)) to form low-hysteresis FETs. We further integrated the ODPA/Al(2)O(3) gate dielectric stack on flexible substrates to demonstrate low-hysteresis, low-voltage FETs, and the promise of these nanostructured materials in flexible, electronic circuitry.

Wet-chemical methods, under rigorous air-free conditions, were used to synthesize single-crystalline 10 nm diameter PbSe nanowires (NWs), and electric-field, directed assembly was employed to align NW arrays to form the semiconducting channels of field-effect transistors (FETs). Electrical measurements revealed as-aligned NWs in bottom, gold, contact FETs are predominantly p-type ambipolar, consistent with the presentation of small barriers to electron and hole injection for this low band gap semiconductor. Exposing the NW FET to UV-ozone p-doped the NWs, illustrating the sensitivity of PbSe to oxygen, but controlled oxidation allowed the fabrication of unipolar p-type FETs. Selectively exposing the contact region of as-aligned NW FETs to low to moderate concentrations of hydrazine, commonly used to n-dope nanocrystal and NW devices, switched the predominantly p- to n-type ambipolar behavior as if the entire NW channel was exposed. At these hydrazine concentrations, charge transfer doping the metal-semiconductor interface dominates the FET characteristics. Only upon exposing the NW FETs to high hydrazine concentrations did charge transfer doping of the NW channel overcome the large intrinsic, thermally generated carrier concentration of this low band gap material, modulating the NW carrier concentration and forming unipolar n-type FETs. Pulling low vacuum removed surface hydrazine returning the predominantly p-type ambipolar FET behavior. Doping and dedoping with hydrazine were repeatedly reversible. By applying surface modification to n- and p-dope PbSe NW FETs, we fabricated the first PbSe NW inverters, demonstrating the promise of these nanostructured materials in integrated circuits.

We demonstrate the effectiveness of out-of-plane magnetized magnetic microdiscs for cancer treatment through mechanical cell disruption under an applied rotating magnetic field. The magnetic particles are synthetic antiferromagnets formed from a repeated motif of ultrathin CoFeB/Pt layers. In-vitro studies on glioma cells are used to compare the efficiency of the CoFeB/Pt microdiscs with Py vortex microdiscs. It is found that the CoFeB/Pt microdiscs are able to damage 62 ± 3% of cancer cells compared with 12 ± 2% after applying a 10 kOe rotating field for one minute. The torques applied by each type of particle are measured and are shown to match values predicted by a simple Stoner-Wohlfarth anisotropy model, giving maximum values of 20 fNm for the CoFeB/Pt and 75 fNm for the Py vortex particles. The symmetry of the anisotropy is argued to be more important than the magnitude of the torque in causing effective cell destruction in these experiments. This work shows how future magnetic particles can be successfully designed for applications requiring control of applied torques.

The successful fabrication of ultra‐thin films of CoFeB/Pt with strong perpendicular magnetic anisotropy and antiferromagnetic interfacial interlayer coupling on flexible polyimide substrates is demonstrated. Despite an increased surface roughness and defect density on the polyimide substrate, magnetic single layers of CoFeB still show sharp coercive switching. Magnetic Kerr imaging shows that the magnetization reversal is dominated by a greater density of nucleation sites than the identical film grown on Si. These layers maintain their magnetic characteristics down to a radius of curvature of 350 ± µm. Further, antiferromagnetically (AF) Ruderman‐Kittel‐Kasuya‐Yoshida (RKKY) coupled bilayers of CoFeB were fabricated which are robust under bending and the coupling strength is successfully modulated via interlayer engineering. Finally, a perpendicular synthetic antiferromagnetic (SAF) thin film grown on a polyimide substrate is patterned into straight 10 µm long nanowires down to 210 nm in width that displayed the robust switching characteristics of the thin film. These are extremely promising results for the fabrication of robust, flexible, magneto‐electronic, non‐volatile memory, logic, and sensor devices.