Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.

One of the most intriguing and fundamental properties of topological systems is the correspondence between the conducting edge states and the gapped bulk spectrum. Here, we use a GaAs cleaved edge quantum wire to perform momentum-resolved spectroscopy of the quantum Hall edge states in a tunnel-coupled 2D electron gas. This reveals the momentum and position of the edge states with unprecedented precision and shows the evolution from very low magnetic fields all the way to high fields where depopulation occurs. We present consistent analytical and numerical models, inferring the edge states from the well-known bulk spectrum, finding excellent agreement with the experiment—thus providing direct evidence for the bulk to edge correspondence. In addition, we observe various features beyond the single-particle picture, such as Fermi level pinning, exchange-enhanced spin splitting and signatures of edge-state reconstruction.

No abstract

We discuss a custom bulk FinFET platform for implementing fast and dense hole spin qubits. Using a double quantum dot with two confined holes, single-and two-qubit control is demonstrated by applying electrical microwave signals to one of the gate electrodes. From these experiments we estimate that both types of gate operations can be realized with gate times in the few nanoseconds regime. In an outlook we discuss how to further scale this technology towards 2D arrays.

Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltagetunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications.