Spin Qubits in Silicon FinFET Devices

Abstract

We discuss a custom bulk FinFET platform for implementing fast and dense hole spin qubits. Using a double quantum dot with two confined holes, single-and two-qubit control is demonstrated by applying electrical microwave signals to one of the gate electrodes. From these experiments we estimate that both types of gate operations can be realized with gate times in the few nanoseconds regime. In an outlook we discuss how to further scale this technology towards 2D arrays.

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

“…[138] Similar small tilts of the g-tensor have recently been found in a Ge/SiGe quantum well, and the decoherence time of up to 9.2 μs has been achieved by detailed analysis of the highly anisotropic HH g-tensor and its dependence on the electric field for operation in the sweet spot. [211] All indications are that a significant amount of HH-LH mixing still exists in planar QDs. Next, we list several causes of the finite HH-LH mixing and design strategies to improve it.…”