This paper introduces an innovative design of a low-pass (LP) negative group delay (NGD) integrated circuit (IC) in 180-nm CMOS technology. The LP-NGD circuit is an inductorless topology constituted by RC-network with CMOS metal-insulator-metal (MIM) capacitor and poly gate resistor. The design methodology is illustrated by considering the chip layout process. Then, the first run simulation is performed with the design rule check (DRC) and 2.5 mm × 2.2 mm layout versus schematic (LVS) approaches. The feasibility of the CMOS LP-NGD IC circuit implementation is validated with chip-on-board (CoB). The proof of concept (PoC) of the LP-NGD miniaturized circuit was tested in both S-parameter and time-domain. As expected, the calculated, simulated and experimented results of CoB showing NGD of about -10 ns over 12 MHz and -10 dB attenuation is confirmed. Moreover, time-domain investigations were also performed to show the feasibility of generating pulse and arbitrary waveform signal time-advance through the designed and fabricated LP-NGD CoB prototypes.
Purpose The purpose of this paper is to introduce an innovative theoretical, numerical and experimental investigations on the HP NGD function. The identified HP NGD topology under study is constituted by first order passive RC-network. The simulations and measurements confirm in very good agreement the HP NGD behaviors of the tested circuits. NGD responses with optimal values of about -1 ns and cut-off frequencies of about 20 MHz are obtained. Design/methodology/approach The identified HP NGD topology understudy is constituted by a first-order passive Resistor-capacitor RC network. An innovative approach to HP NGD analysis is developed. The analytical investigation from the voltage transfer function showing the meaning of HP properties is established. Findings This paper introduces innovative theoretical, numerical and experimental investigations on the HP NGD function. Originality/value The NGD characterization as a function of the resistance and capacitance parameters is investigated. The feasibility of the HP NGD function is verified with proofs of concept constituted of lumped surface mounted components on printed circuit boards. The simulations and measurements confirm in very good agreement the HP NGD behaviors of the tested circuits. NGD responses with optimal values of about −1 ns and cut-off frequencies of about 20 MHz are obtained.
An innovative design method of bandpass (BP) negative group delay (NGD) active circuit is developed. The BP NGD topology consists originally of octopole and hexapole coupled line (CL) couplers. The NGD active circuit is validated by a prototype implemented in hybrid technology. The measured results are in good agreement with simulations. The CL-based passive circuit generates BP NGD performance with simulated and measured results showing NGD level of approximately -12 ns having 1.97 GHz center frequency with -11 dB transmission coefficient and -16 dB reflection coefficient. To compensate the loss, active circuit was fabricated by cascading the passive circuit with a microwave amplifier. Subsequently, the previous BP NGD performance is achieved with 0 dB gain. Moreover, a notable active microwave device characterization is performed with the NGD prototype via nonlinear measurements. It was found that the tested NGD prototype operates with 10-dB noise figure, 21 dBm P1dB compression, 29 dBm and 41 dBm OIP3.
This paper explains why the electromagnetic coupling between interconnect main Ω-shape and straight I-lines of printed circuit board (PCB) can be source of bandpass (BP) negative group delay (NGD) behavior. The investigation on the NGD effect is established from an innovative microstrip circuit having medusa shape. The medusa topology analytical description is based on the equivalent circuit and S-matrix model. Then, the group delay (GD) response enabling to explain the existence of the BP NGD function is defined. As proofof-concept (POC), the influences of the medusa circuit constituting interconnect line (IL) lengths and interspaces on the BP NGD behavior are illustrated by parametric study. The NGD behavior is explained by the variations of the NGD value and NGD center frequency. More importantly, two NGD medusa prototypes were designed, fabricated, simulated and tested. The BP NGD responses of the two-medusa circuit POCs are validated by a very good agreement between the calculations, simulations and experimentations. The test results confirm that the medusa circuit POCs generate BP NGD responses with NGD level and center frequency of about À1.6 ns and 2.76 GHz respectively.
A theoretical investigation of distributed microwave circuit built with Ti-shape topology is developed. The topology under study consists of neighbored T-and i-shape interconnect lines. The Titopology equivalent S-matrix is calculated as a function of crosstalk coupling coefficient and coupled line (CL) delay. To highlight the NGD modelling feasibility, parametric analyses with respect to the T-and ielement coupling and delay are introduced. More practical validation is carried out with designed, simulated and measured microstrip prototype. It is found that because of T-and i-crosstalk, the Ti topology can behave as a bandpass NGD function. A good NGD performance with NGD level of approximately-1 ns around the center frequencies 2.2 GHz with transmission coefficient of approximately-2.1 dB and reflection coefficient better than-14 dB. The measured results are in good agreement with calculated models and simulations. Two-cell Ti-NGD circuits were also investigated to illustrate the designability of the topology for multi-band and widened single band NGD responses.
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