Purpose The purpose of this paper is to introduce an innovative theoretical, numerical and experimental investigations on the HP NGD function. The identified HP NGD topology under study is constituted by first order passive RC-network. The simulations and measurements confirm in very good agreement the HP NGD behaviors of the tested circuits. NGD responses with optimal values of about -1 ns and cut-off frequencies of about 20 MHz are obtained. Design/methodology/approach The identified HP NGD topology understudy is constituted by a first-order passive Resistor-capacitor RC network. An innovative approach to HP NGD analysis is developed. The analytical investigation from the voltage transfer function showing the meaning of HP properties is established. Findings This paper introduces innovative theoretical, numerical and experimental investigations on the HP NGD function. Originality/value The NGD characterization as a function of the resistance and capacitance parameters is investigated. The feasibility of the HP NGD function is verified with proofs of concept constituted of lumped surface mounted components on printed circuit boards. The simulations and measurements confirm in very good agreement the HP NGD behaviors of the tested circuits. NGD responses with optimal values of about −1 ns and cut-off frequencies of about 20 MHz are obtained.
This paper explores an original study of bandpass (BP) negative group delay (NGD) robustness applied to the ring-stub passive circuit. The proof of concept (PoC) circuit is constituted by a ring associated with the open-end stub implemented in microstrip technology. An innovative experimental setup of a temperature room containing the NGD PoC connected to a vector network analyzer is described. Then, the electrothermal data of S-parameters are measured by varying the ambient or room temperature range from 20 to 60°C, i.e. 40°C maximal variation. The empirical results of the group delay (GD), transmission and reflection coefficient mappings versus the couple (temperature, frequency) highlight how the temperature affects the BP NGD responses. An innovative electrothermal calibration technique by taking into account the interconnection cable influence is developed. The electrothermal robustness analysis is carried out by variations of the NGD center frequency, cut-off frequencies and value in function of the temperature.
The unfamiliar negative group delay (NGD) circuit is the less familiar function for most of RF and microwave design engineers. Among the existing types, the bandpass (BP) NGD type circuits are the most convenient for the wireless communication microwave technology. Therefore, it is particularly important to explore different microwave circuit topologies operating as BP-NGD function. An innovative design of BP-NGD topology constituted by defected ground structure (DGS) with complementary split ring resonator (CSRR) is developed in the present paper. The DGS-based BP-NGD structure design method is introduced in function of the CSRR geometrical elements followed by S-parameter parametric analyses. As proof-of concept (POC), the design method of the proposed BP-NGD passive fully distributed circuit is described. The effectiveness of the BP-NGD structure and the test feasibility are investigated by implementing two different prototypes represented by single-and double-wing DGS passive circuits. It is observed that significant BP-NGD function performances were validated by well-correlated simulations and measurements showing -1.9 ns NGD value around the center frequency, 2.46 GHz over 31 MHz NGD bandwidth. In addition, the tested BP-NGD prototypes present insertion loss better than 4 dB and reflection loss better than 16.7 dB. Because of its potential integration, the investigated BP-NGD circuit is potentially useful for the communication system performance improvement for example via delay effect reduction in the RF and microwave devices.INDEX TERMS Defected ground structure (DGS), design method, microwave circuit, bandpass negative group delay (BP-NGD) function, NGD analysis.
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