Interface states can always arise in heterostructures that consist of two or more (artificial) materials with topologically different energy bands. The gapped band structure can be classified by the Chern number (a topological invariant) generally or the Zak phase in one-dimensional periodic systems. Recently, topological properties have been employed to investigate the interface states occurring at the connecting regions of the heterostructures of mechanical isostatic lattices and acoustical waveguides. Here, we study this heterostructure phenomenon by carefully connecting two corrugated stainless steel waveguides with Bragg and non-Bragg gaps at approximately the same frequency. These two waveguide structures can be achieved by continuously varying their geometry parameters when a topological transition exists in the forbidden bands, in which the reflection impedance changes the sign. Furthermore, a localized single high-order mode has been observed at the interface because of the transverse mode interactions, which relate to the non-Bragg gaps created by the different transverse mode resonances. Such a localized acoustic single mode with very large enhanced intensity could find its applications in sound detection, biomedical imaging, and underwater sound control, and could also enrich our means of wave front manipulations in various engineering fields.
We propose a classical analog of electromagnetically induced transparency in a cylindrical waveguide with undulated metallic walls. The transparency, induced by multi-mode interactions in waveguides, not only has a narrow line-width, but also consists of a single second-order transverse mode, which corresponds to the Bessel function distributions investigated extensively due to their unique characteristics. By increasing the thickness of sputtered gold layers of the waveguide, we demonstrate a frequency-agile single mode transparency phenomenon in a terahertz radiation. It is found that the center frequency of the transparency is linearly related to the gold thickness, indicating the achievement of a controllable single mode terahertz device. The field distributions at the cross-sections of outlets verify the single second mode transparency and indicate the mechanism of its frequency manipulation, which will significantly benefit the mode-control engineering in terahertz applications.
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