We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials.
Variable temperature Hall effect measurement was performed on the AlGaN/AlN/GaN structure with AlN interlayer grown on sapphire by metalorganic chemical vapor deposition. It was measured that the mobility and density of the two dimensionalelectron gas at the interface of AlN/GaN were 1.4×104cm2·V-1·s-1 and 9.3×1012cm-2 at 2K,respectively. Low temperature variable magnetic field measurement manifested that only a single type of carriers contributed to the conductivity in this structure. Quantum Hall effect was observed in field as low as 3T at 2K. The calculated quantum scattering time of 0.23ps is longer than that of AlGaN/GaN structure. This improvement is attributed to the AlN interlayer which effectively reduces the scattering. In addition,further analysis revealed that the small-angle scattering was important in this structure.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.