A hypothesis based on the model that explains the resistance change effect of resistive random access memory by redox reaction is proposed. This hypothesis leads to the conclusion that the relationship between the polarity of the applied bias voltage and the resultant resistance change in p-type semiconductors is opposite to that for n-type semiconductors. The bias polarity dependence of the resultant resistance change in ZnO and Ga-doped ZnO (GZO), which are n-type semiconductors, and that in NiO, which is a p-type semiconductor, were investigated using conducting atomic force microscopy. Opposite bias polarity was confirmed to induce GZO and NiO into the same resistance state, which is consistent with the hypothesis.

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98 220 平成21年11月6日 第50回真空に関する連合講演会で発表  1 鳥取大学工学研究科電気電子工学専攻(〒680 8552 鳥取県鳥 取市湖山町南 4 101)  2 鳥取大学工学部付属電子ディスプレイ研究センター(〒680 0941 鳥取県鳥取市湖山町北 2 丁目522番地 2 セコム山陰 IT ラ ボラトリー内 2F)  3 尾池工業株式会社 フロンティアセンター(〒601 8121 京都 府京都市南区上鳥羽大物町65) 98 220 -( )-J. Vac. Soc. Jpn. 第 回真空に関する連合講演会プロシーディングス 速 報 Ga ドープ ZnO 薄膜における不揮発性抵抗変化現象の 成膜雰囲気依存性

Fabrication of Flexible Transparent Resistive Random Access Memory (FT-ReRAM) which consists of Ga-doped ZnO (GZO)ˆlm not only as a memory layer but also as electrodes on the large Poly Ethylene Naphthalate (PEN) sheet was attained by introducing RF plasma assist DC magnetron sputtering method. The averaged transmittance in the visible region (400 800 nm) was 72. The resistance change eŠect without morphological change was conˆrmed by using conducting atomic force microscope (C-AFM). Stable and repeatable bi-polar resistive switching by applying the voltage less than 2.5 V was conˆrmed in the all-GZO-FT-ReRAM. The present work showed the high applicability of the all-GZO-FT-ReRAM to achieve ‰exible transparent devices for the next generation.