By means of our patented strain engineering technology, we achieved high crystal quality and near zero wafer bow on our 150 mm GaN‐on‐Si wafers. To show the feasibility of our wafers for HEMTs with large gate periphery, we investigated the buffer breakdown(VBR) yield on device test structures with different periphery. To reduce the processing complexity, we used comb‐shaped structures with only source and drain contacts and N+ implant isolation in between the contacts. The VBR was defined at buffer leakage of 1 µA/mm. For a typical source‐drain distance of 14 µm, the VBR yield specification is 600 V. Then we demonstrated over 80% VBR yield for 100 mm device test structures on our 150 mm GaN‐on‐Si wafers. This high yield for large periphery test structures shows that our 150 mm GaN‐on‐Si wafers are very suitable for fabricating large HEMT devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
82Onm high power laser (r2Spe laser) which can oscillate at 5OmW up to IOO.C has been developed by employing I4OCVD technique. Typical characteristj.c temperature To is 160K. The astigrmatic distance is less than 6Um in the power range between l-mW and 30mW, and S/N ratio (f=2OkHz, BW=3OOHz) is Iarger than 6tdB. I.{TTF at 60oC, 3OmW is estimated to be longer than 2OOOO hours. The I-SPB laser is a promising light source for ODD (optical disk drive) systems. Recently, optical disk drive (ODD) grow thin epitaxial l.y.r".
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.