Inverted Inner Stripe Laser with a p-GaAs Buffer Layer Grown by MOCVD

Abstract

82Onm high power laser (r2Spe laser) which can oscillate at 5OmW up to IOO.C has been developed by employing I4OCVD technique. Typical characteristj.c temperature To is 160K. The astigrmatic distance is less than 6Um in the power range between l-mW and 30mW, and S/N ratio (f=2OkHz, BW=3OOHz) is Iarger than 6tdB. I.{TTF at 60oC, 3OmW is estimated to be longer than 2OOOO hours. The I-SPB laser is a promising light source for ODD (optical disk drive) systems. Recently, optical disk drive (ODD) grow thin epitaxial l.y.r".