No abstract

Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.

Millimetre size UZn 12 single crystals were grown by the high temperature solution growth method using zinc as the solvent. Single-crystal x-ray diffraction data confirm that this compound crystallizes in the hexagonal high temperature form of SmZn 12 (S.G. P6/mmm) and points to a U 1.01(1) Zn 11.7(1) stoichiometry for the crystals, with ∼4% of the U atoms being located at the 2c site due to the partial substitution of 4h Zn pairs. UZn 12 orders antiferromagnetically at T N = 5.0(2) K, and the magnetization and resistivity measurements suggest that the magnetic moments are confined within the a-b plane. The Sommerfeld coefficient, derived from the paramagnetic region by the standard method, is γ p ≈ 200 mJ (mol K 2 ) −1 , which definitely classifies UZn 12 as a moderate heavy-fermion system. The heavy-fermion character of UZn 12 is also manifested in the overall shape of temperature-dependent electrical resistivity that is dominated by a single-ion Kondo effect at high temperatures and coherent Kondo scattering at low temperatures. The paramagnetic magnetoresistivity isotherms can be fairly well superimposed onto each other using Schlottmann's scaling for the single-ion Kondo model, as expected for a Kondo system.

A hybrid-trench-isolation (HTI) technology is proposed to overcome the scaling limitations caused by the difficulty of gate thinning and increased soft error rate at the 0.1 pn era. It is revealed that a significant speed improvement against bulk is achieved by using the body-tied structure without floating-body-related speed deterioration. A two-order reduction in the soft error rate for an HTI-SO1 4M-bit SRAM was demonstrated as compared with bulk one. Moreover, it is presented that full trench isolation in the HTI offers excellent isolation characteristics to realize the one-chip integration of analog and digital LSI's. It is concluded that SO1 technology with the HTI structure is one of the solutions against the scaling limitations. IntroductionAggressively scaled-down CMOS technology faces the scaling barriers of the silicon technology. Two of the crucial issues are speed-improvement degradation and soft-error-rate increase. The difficulty of gate-oxide thinning spoils performance improvements. The reduction of the supply voltage and device dimension increases soft error rate. The theme of this paper is whether Silicon-&-Insulator (SOI) can break through scaling barriers. It is reported that the SO1 is substantially efficient against these issues [l, 21. However, its effectiveness have not discussed in detail at around the 0.1 pm generation. Especially, the floating-body effects are suggested to be the critical problem to obtain the SOI's performance gain in the 0.1 pn generation [3, 41. To extract the inherent feature of the SOI, we have proposed the hybrid-trench-isolation (HTI) structure, featuring body-tied transistor's with ideal and stable characteristics [5-71. In this paper, we reveal the distinct validity of the HTI-SO1 technology beyond the silicon technology crisis by investigating the speed performance, soft error rate, and signal isolation characteristics.

Previous studies have demonstrated that non-parametric hedging models using temperature derivatives are highly effective in hedging profit/loss fluctuation risks for electric utilities. Aiming for the practical applications of these methods, this study performs extensive empirical analyses and makes methodological customizations. First, we consider three types of electric utilities being exposed to risks of “demand,” “price,” and their “product (multiplication),” and examine the design of an appropriate derivative for each utility. Our empirical results show that non-parametrically priced derivatives can maximize the hedge effect when a hedger bears a “price risk” with high nonlinearity to temperature. In contrast, standard derivatives are more useful for utilities with only “demand risk” in having a comparable hedge effect and in being liquidly traded. In addition, the squared prediction error derivative on temperature has a significant hedge effect on both price and product risks as well as a certain effect on demand risk, which illustrates its potential as a new standard derivative. Furthermore, spline basis selection, which may be overlooked by modeling practitioners, improves hedge effects significantly, especially when the model has strong nonlinearities. Surprisingly, the hedge effect of temperature derivatives in previous studies is improved by 13–53% by using an appropriate new basis.