This paper presents an RFID chip for 13.56-MHz band communication fabricated on a glass substrate by using amorphous InGa-Zn-O thin-film transistors. Low driving-voltage logic circuits were achieved with a small Vth, a high field effect mobility of 15 cm 2 /Vs and "active load" inverters that had small consumption currents. The RFID tag was successively driven by 13.56-MHz wireless input. Keywords: Oxide-Semiconductor, a-IGZO, TFT, RFID, 13.56-MHz Classification: Electron devices, circuits, and systems , pp. 199-202, 2009. [7] T. Kawamura, H. Uchiyama, S. Saito, H. Wakana, T. Mine, M. Hatano, K. Torii, and T. Onai "1.5-V operating fully-depleted amorphous oxide thin film transistors achieved by 63-mV/dec subthreshold slope," IEDM Tech. Dig., pp. 77-80, 2008. [8] T.
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We have fabricated a rectifier using fully depleted amorphous In-Ga-Zn-O (a-IGZO) TFTs. The rectifier is composed of four TFTs and exhibited the rectification of 13.56-MHz wireless input from a commercial RFID reader/writer for the first time in oxide TFT devices. This result opens the possibility for wireless application of oxide TFTs.
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