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A beam-monitor system for XFEL/SPring 8, ''SACLA,'' has been constructed. In order to maintain a stable self-amplified spontaneous emission (SASE) interaction, the straightness and overlap of the axes to within 3 m between the electron beams and the radiated x rays for an undulator section of about 100 m length is necessary. This straightness means relative alignment to an experimental target sample. Furthermore, a temporal stability of 30 fs in order to maintain a constant peak beam current is also necessary to conduct stable SASE lasing. The monitor system was developed to satisfy these spatial and temporal stability and resolution criteria. The system comprises spatial monitors, such as cavity-type beam-position monitors and screen monitors, as well as temporal measurement instruments, such as current monitors, waveguide spectrometers, coherent synchrotron-radiation detectors, a streak camera, and an rf deflector. Commissioning of SACLA started from March 2011, and the monitors performed sufficient roles to tune the beams for lasing. The achieved overall performances of the system, including data acquisition, are: the beam position monitor has a spatial resolution of 600 nm in rms; the bunchlength monitors show ability to observe bunch lengths from 1 ns in an injector with velocity bunching to less than 30 fs after three-stage bunch compressors. The less than 3 m spatial resolution of the screen monitor was also confirmed during practical beam operation. Owing to these fulfilled performances, such as the high spatial and temporal resolutions, stable lasing of SACLA has been achieved.

Ptychographic coherent diffraction imaging (CDI) allows the visualization of both the structure and chemical state of materials on the nanoscale, and has been developed for use in the soft and hard X-ray regions. In this study, a ptychographic CDI system with pinhole or Fresnel zone-plate optics for use in the tender X-ray region (2–5 keV) was developed on beamline BL27SU at SPring-8, in which high-precision pinholes optimized for the tender energy range were used to obtain diffraction intensity patterns with a low background, and a temperature stabilization system was developed to reduce the drift of the sample position. A ptychography measurement of a 200 nm thick tantalum test chart was performed at an incident X-ray energy of 2.500 keV, and the phase image of the test chart was successfully reconstructed with approximately 50 nm resolution. As an application to practical materials, a sulfur polymer material was measured in the range of 2.465 to 2.500 keV including the sulfur K absorption edge, and the phase and absorption images were successfully reconstructed and the nanoscale absorption/phase spectra were derived from images at multiple energies. In 3 GeV synchrotron radiation facilities with a low-emittance storage ring, the use of the present system will allow the visualization on the nanoscale of the chemical states of various light elements that play important roles in materials science, biology and environmental science.

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate.Criteria specific to any lithographic process for the semiconductor industry include overlay, throughput and defectivity. The purpose of this paper is to describe the technology advancements made overlay, throughput and defectivity and to introduce the FPA-1200NZ2C cluster system designed for high volume manufacturing of semiconductor devices. in the reduction of particle adders in an imprint tool and introduce the new mask replication tool that will enable the fabrication of replica masks with added residual image placement errors suitable for memory devices with half pitches smaller than 15nm.Overlay results better than 5nm 3sigma have been demonstrated. To further enhance overlay, wafer chucks with improved flatness have been implemented to reduce distortion at the wafer edge. To address higher order corrections, a two part solution is discussed. An array of piezo actuators can be applied to enable linear corrections. Additional reductions in distortion can then be addressed by the local heating of a wafer field.The NZ2C cluster platform for high volume manufacturing is also discussed. System development continues this year with a target for introduction later in 2016. The first application is likely to be NAND Flash memory, and eventual use for DRAM and logic devices as both overlay and defectivity improve. *Jet and Flash Imprint Lithography and J-FIL are trademarks of Molecular Imprints Inc.

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