A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 x 10(-2) cm2 V(-1) s(-1).
The field-effect mobility in n-type fullerene field-effect transistors was improved by the hetero-layered structure including the interfacial layer of organic semiconductor between the insulator and channel semiconductor. Various types of hole transporting material were employed for the interfacial layer. The device showed high electron mobility exceeding 1 cm 2 =Vs that was better than that for the substrates with conventional surface treatments, for example, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). These results suggest that the electron-donating character of the hole transporting materials leads to filling the electron traps at the insulator interface.
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