A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 x 10(-2) cm2 V(-1) s(-1).

Solution-processable electronegative oligothiophenes bearing difluorodioxocyclopentene-annelated thiophenes have been synthesized. The electronic properties of the oligomers were investigated by absorption spectroscopy and electrochemical measurements. Their films fabricated by spin-coating showed typical n-channel OFET behavior.

Poled film of 2-methyl-4-nitroaniline (MNA) and poly(methyl methacrylate) is prepared. Poling effects of MNA molecular alignments are observed by reducing the absorption spectrum and increasing the refractive index of the film. Phase-matched second harmonic generation (SHG) is achieved using the mode dispersion relation of the optical waveguide with an estimated SHG conversion efficiency of 7.4 x 10(-3) % in the waveguide.

We have reported the FIB repair system with low acceleration voltage is applicable to 65nm generation photomasks. Repair technology beyond 65nm generation photomasks requires higher edge placement accuracy and more accurate shape. We developed two new functions, "Two Step Process" and "CAD Data Copy". "Two Step Process" consists of primary process and finishing process. The primary process is conventional process, but the finishing process is precise process to control repaired edge position with sub-pixel order. "Two Step Process" achieved edge placement repeatability less than 3nm in 3sigma. At "CAD Data Copy", defects are recognized with comparison between shape captured from a SIM image and that imported from a CAD system. "CAD Data Copy" reproduced nanometer features with nanometer accuracy. Thus the FIB repair system with low acceleration voltage achieves high performance enough to repair photomasks beyond 65nm generation by using "Two Step Process" and "CAD Data Copy".