Amorphous indium gallium zinc oxide (a-IGZO) films were fabricated using dc magnetron sputtering with water vapor (H2O or D2O) introduction. To determine the incorporation pattern of water, films were characterized by secondary ion mass, Fourier transform infrared, Raman, and hard X-ray photoelectron spectroscopies. Chemically bound hydroxyl groups were observed, and more hydroxyl bonds existed nearer to the interface between the substrate and film than in the film. Furthermore, for a-IGZO films, subgap densities of states near valence band maxima increased with the H2O partial pressure during deposition, which can be attributed to defect-level generations due to H and O.
Two very-high-frequency powers between which the phase difference is varying in split of time are supplied to a ladder-shaped electrode through multiple feeding points located at symmetrical positions of the electrode to generate a large-area uniform plasma. Theoretical calculations of the voltage distribution at several phase difference show good agreement with experiments. Plasma emission uniformity within ±15% is demonstrated at 60MHz for the substrate size of 1.4×1.1m, with nitrogen gas of 10Pa.
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