The tumor suppressor Smad4, a key mediator of the TGF-b/BMP pathways, is essential for development and tissue homeostasis. Phosphorylation of Smad4 in its linker region catalyzed by the mitogen-activated protein kinase (MAPK) plays a pivotal role in regulating its transcriptional activity and stability. In contrast, roles of Smad4 dephosphorylation as a control mechanism of TGFb/BMP signaling and the phosphatases responsible for its dephosphorylation remain so far elusive. Here, we identify Wip1 as a Smad4 phosphatase. Wip1 selectively binds and dephosphorylates Smad4 at Thr277, a key MAPK phosphorylation site, thereby regulating its nuclear accumulation and half-life. In Xenopus embryos, Wip1 limits mesoderm formation and favors neural induction by inhibiting TGF-b/BMP signals. Wip1 restrains TGF-b-induced growth arrest, migration, and invasion in human cells and enhances the tumorigenicity of cancer cells by repressing the antimitogenic activity of Smad4. We propose that Wip1-dependent dephosphorylation of Smad4 is critical for the regulation of TGF-b signaling.

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A novel and highly efficient methodology to regulate (enhance or suppress) the Volmer–Weber 3D growth mode of ultra‐thin (<10 nm) Ag layers by modulating the surface stoichiometry of ZnO substrates prior to Ag deposition is presented. Relative to pristine ZnO layers, oxygen‐deficient surface states formed by preferential removal of surface oxygen atoms remarkably improve Ag layer wettability, whereas oxygen‐excessive surface states formed by oxygen atom incorporation strongly facilitate Ag agglomeration. The dissimilar nucleation and coalescence dynamics are elucidated via combined molecular dynamics and force‐bias Monte Carlo simulations. The improved wettability results in significantly lower sheet resistance in the ultra‐thin (6–10 nm) Ag layers, for example, 6.03 Ωsq−1 at 8 nm, than the previously reported values from numerous other approaches in the equal thickness range. When this unique methodology is applied to ZnO/Ag/ZnO transparent electrodes, simultaneous improvement in electrical conductivity and visible transparency is realized, with a resultant Haacke figure of merit value of 0.139 Ω−1 that is >50% higher than the best reported value for an identically structured electrode. We select transparent heating devices as a model system to confirm that the superior optoelectronic properties are highly sustainable under simultaneous and severe electrical, mechanical, and thermal stresses.

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A vital objective in the wetting of Au deposited on chemically heterogeneous oxides is to synthesize a completely continuous, highly crystalline, ultrathin-layered geometry with minimized electrical and optical losses. However, no effective solution has been proposed for synthesizing an ideal Au-layered structure. This study presents evidence for the effectiveness of atomic oxygen-mediated growth of such an ideal Au layer by improving Au wetting on ZnO substrates with a substantial reduction in free energy. The unexpected outcome of the atomic oxygen-mediated Au growth can be attributed to the unconventional segregation and incorporation of atomic oxygen along the outermost boundaries of Au nanostructures evolving in the clustering and layering stages. Moreover, the experimental and numerical investigations revealed the spontaneous migration of atomic oxygen from an interstitial oxygen surplus ZnO bulk to the Au–ZnO interface, as well as the segregation (float-out) of the atomic oxygen toward the top Au surfaces. Thus, the implementation of a 4-nm-thick, two-dimensional, quasi-single-crystalline Au layer with a nearly complete crystalline realignment at a mild temperature (570 K) enabled exceptional optoelectrical performance with record-low resistivity (<7.5 × 10–8 Ω·m) and minimal optical loss (∼3.5%) at a wavelength of 700 nm.