Two-dimensional (2D) molybdenum disulphide (MoS2) atomic layers have a strong potential to be used as 2D electronic sensor components. However, intrinsic synthesis challenges have made this task difficult. In addition, the detection mechanisms for gas molecules are not fully understood. Here, we report a high-performance gas sensor constructed using atomic-layered MoS2 synthesised by chemical vapour deposition (CVD). A highly sensitive and selective gas sensor based on the CVD-synthesised MoS2 was developed. In situ photoluminescence characterisation revealed the charge transfer mechanism between the gas molecules and MoS2, which was validated by theoretical calculations. First-principles density functional theory calculations indicated that NO2 and NH3 molecules have negative adsorption energies (i.e., the adsorption processes are exothermic). Thus, NO2 and NH3 molecules are likely to adsorb onto the surface of the MoS2. The in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between the MoS2 and the gas molecules.

Two-dimensional (2D) molybdenum disulfide (MoS2) atomic layers have a strong potential to be adopted for 2D electronic components due to extraordinary and novel properties not available in their bulk foams. Unique properties of the MoS2, including quasi-2D crystallinity, ultrahigh surface-to-volume, and a high absorption coefficient, have enabled high-performance sensor applications. However, implementation of only a single-functional sensor presents a limitation for various advanced multifunctional sensor applications within a single device. Here, we demonstrate the charge-transfer-based sensitive (detection of 120 ppb of NO2) and selective gas-sensing capability of the chemical vapor deposition synthesized MoS2 and good photosensing characteristics, including moderate photoresponsivity (∼71 mA/W), reliable photoresponse, and rapid photoswitching (<500 ms). A bifunctional sensor within a single MoS2 device to detect photons and gas molecules in sequence is finally demonstrated, paving a way toward a versatile sensing platform for a futuristic multifunctional sensor.

Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS and MoSvia hydrazine doping and sulfur annealing. Hydrazine treatment of WS improves the field-effect mobilities, on/off current ratios, and photoresponsivities of the devices. This is due to the surface charge transfer doping of WS and the sulfur vacancies formed by its reduction, which result in an n-type doping effect. The changes in the electrical and optical properties are fully recovered when the WS is annealed in an atmosphere of sulfur. This method for reversible modulation can be applied to other transition metal disulfides including MoS, which may enable the fabrication of two-dimensional electronic and optoelectronic devices with tunable properties and improved performance.

The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p+-i-n-p-p+ diode structure. Five representative logic gates (“AND”, “OR”, “NAND”, “NOR”, and “NOT”) are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate-controlled graphene-silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (≈10 ), a very high photoresponsivity (≈70 A W ), and a low dark current in the order of µA cm in a wide wavelength range (395-850 nm) is demonstrated. The photoresponsivity is ≈100 times higher than that of existing commercial photodetectors, and 7000 times higher than that of graphene-field-effect transistor-based photodetectors, while the dark current is similar to or lower than that of commercial photodetectors. This result can be explained by a unique gain mechanism originating from the difference in carrier transport characteristics of silicon and graphene.