We investigate the transmission properties of a metamagnetic structure, the so-called cut-wire pair (CWP), using the transfer-matrix method and the finite integration technique. The electric and magnetic resonances of the CWP structure are demonstrated by the effective medium analyses. The corresponding effective permittivity and permeability are calculated from the complex scattering parameters using the standard retrieval procedure. Importantly, the dependence of transmission properties and resonance frequencies on the periodicities as well as the shape of CWP are systematically examined.
Recombination in Pb,,,Sn,,,Te at High Levels of Optical Excitation 3 v T. S. HOAI (a) and R. H. HERRMANN (b)The photoconductivity and the photomagnetoelectric current in low-concentration, high-lifetime Pbo,&10,~7Te samples are measured a t strong optical excitation using a &-switched ruby laser. A t quantum flux Q > 2 >: loz1 cm-%-l nonlinear recombination is observed. From the characteristics measured the coefficient of Auger recombination C = (4.5 & 1) : < cm%l is obtained. The results are confirmed by lifetime data obtained at low excitation levels.Die Photoleitfiihigkeit nnd der PEM-KurzschluBstrom bei Anregung mit einem gutegeschalteten Rubinlaser werden an Pbo,ssSno,liTe-Proben geringer Ladnngstragerkonzentration und hoher Lebensdauer gemessen. Bei QuantenfluBdichten Q > 2 >; loz1 cm-2s-1 wird nichtlineare Rekombination beobachtct. Aus den MeBergebnissen wird der Koeffizient der Augerrekombination C = (4,5 & 1) x cmW1 bestimmt. Die Ergebnisse werden gestutzt durch Lebensda,uermessungen bei schwachcr Anregung.T. X. HOAI and K. H. HERRMANN measurements, the electron to hole mobility ratio 6 = 2.5 + 0.2 was obtained from Hall reversal; the Hall factor was taken as unity, a photoelectric quantum yield 7 = 1 was assumed. The samples exhibited small-signal ratio lifetimes as high as z = (3 to 8.5) x s and a surface recombination velocity s = (5 to 6) x 103 cm/s for fresh surfaces (for determination see [ 11). Such low values of s were obtained only by a special procedure [4] (see, for comparison, the spectral photoresponse reported by [5, 61, indicating much higher s).
For calculating the threshold in semiconductor injection lasers with k‐conserving interband transitions a model is proposed which is valid both in the T = 0 and the T ≠ 0 case. Assuming a strongly degenerate active medium but non‐degenerate minority carriers, analytical expressions are obtained for the threshold in lead chalcogenide lasers both, for the Dimmock and the Kane band model. A quantitative analysis is carried out for Pb0.83Sno.17Te as the active medium and radiative as well as Auger recombination.
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