Pulsed power generator using semiconductor switches have been developed. We have developed switching module using discrete type Silicon Carbide (SiC) Device for pulsed power circuit. We compare the switching module using SiC‐MOSFETs with conventional module using IGBTs. Both of switching devices the switching loss increased when the voltage get higher. The switching module using SiC‐MOSFETs can input higher voltage and has less switching loss in same input voltage. Also, we have investigate the switching loss depend on di/dt at switching. The permissible di/dt of SiC‐MOSFETs was higher than IGBTs. However, there is a limit to the value of permissible di/dt. The loss in this module is reduced by applying magnetic assist. The advantage of SiC‐MOSFET was confirmed in switching for pulsed power.
A superconducting RF test facility (STF) is being constructed at KEK for R&D oriented toward the International Linear Collider (ILC). [1] Under KEK's guidance, Hitachi, Ltd. has manufactured cryostat components at its factory and completed final assembly in the STF Linac Building at KEK. The STF cryomodule consists of two cryostats, each about six meters long based on the TESLA-TTF-type III design. Each cryostat can house four 9-cell cavities, each one meter in length.[2] This report outlines the flow of manufacturing from the factory to final assembly, and describes the manufacturing of equipment, assembly precision, and other matters.
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