A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell, has been developed based on ACJ (Artificially Constructed Junction) technology. A conversion efficiency of more than 18% has been achieved, which is the highest ever value for solar cells in which the junction was fabricated at a low temperature (<200°C).
An aperture-area conversion efficiency of 20.0% (intrinsic efficiency: 21 .O%) has been achieved for a 1 .Ocm2 CZ n-type single crystalline silicon (c-Si) solar cell, by using the "HIT (Heterojunction with Intrinsic Thinlayer)" structure on both sides of the cell. This is the world's highest value for a c-Si solar cell in which the junction is fabricated at a low temperature of below 200 'C.In this paper, the junction fabrication technologies and features of the HIT structure are reviewed. The stability under light and thermal exposure, and the temperature dependence on performance of a highefficiency HIT solar cell are also reported.
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