High-efficiency a-Si/c-Si heterojunction solar cell

Sawada, T.; Terada, N.; Tsuge, Sadaji; Baba, Toshiaki; Takahama, T.; Wakisaka, Kenichiro; Tsuda, S.; Nakano, Satoshi

doi:10.1109/wcpec.1994.519952

Cited by 99 publications

(94 citation statements)

References 16 publications

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“…The open-circuit voltage V OC is 0.51 V, which is about 0.1 V below the values observed for c-Si based cells with metal back electrodes. 16 of 41% is due to the lateral resistance of the PANI film ͑and the absence of a top metallic grid͒. It is of interest that the light and dark curves cross at about 0.6 V; while such "crossover" is not typical for homojunction c-Si diodes, it has been reported previously for heterojunctions of ͓poly͑3,4-ethylenedioxythiophene͒:poly ͑styrenesulfonate͔͒ ͑PEDOT:PSS͒ on a-Si: H. 6,9 In Fig.…”

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confidence: 66%

Polyaniline on crystalline silicon heterojunction solar cells

Wang

Schiff

2007

Applied Physics Letters

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Organic/inorganic heterojunction solar cells were fabricated on the (100) face of n-type silicon crystals using acid-doped polyaniline (PANI) with widely varying conductivities. For films with conductivities below 10−1S∕cm, the open-circuit voltage VOC increases with increasing film conductivity as expected when VOC is limited by the work function of the film. Extrapolation of these results to the higher conductivity films indicates that PANI could support VOC of 0.7V or larger. VOC measurements for the cells with higher conductivity PANI saturated at 0.51V. We speculate that uncontrolled surface states at the PANI/Si interface are reducing these values.

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confidence: 66%

Polyaniline on crystalline silicon heterojunction solar cells

Wang

Schiff

2007

Applied Physics Letters

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“…For a-Si cells, thin undoped a-SiC:H buffer layers, sometimes graded in carbon content, are inserted between the p-and the i-layer of p/i/n solar cells [7]. Another example is the HIT solar cell manufactured by Sanyo [8]. This cell is a crystalline-Si solar cell where the emitter and collector layers are deposited using a-Si techniques.…”

Section: Use Of "Resistive" Buffer Layers Between the Emitter And Absmentioning

confidence: 99%

Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

Roedern

Bauer

1999

MRS Proc.

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This paper discusses material requirements for junction layers needed to obtain solar cells with highest possible open-circuit voltages (V OC ). In a typical a-Si:H-based "p/i/n" solar cell, this includes the transparent conductive oxide (TCO) contact layer, the p-layer, a "buffer layer" inserted at the p/i interface, and the surface portion of the intrinsic layer. In HIT-cells, the i-layer between (n-type) c-Si and (p-type) a-Si:H may be regarded as the buffer. Our suggestion to obtain high values of V OC relies on using materials with high lifetimes and low carrier mobilities that are capable of reducing surface or junction recombination by reducing the flow of carriers into this loss-pathway. We provide a general calculation that supports these approaches and can explain why these schemes are beneficial for all solar cells.

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“…2͒ for a practical size of 100.4 cm 2 and 17.3% module efficiency 2 in HIT structures on N-type c-Si substrates, leading to industrial production already in 2003. Sanyo has focused on P-a-Si:H/N-c-Si HIT structures, [1][2][3][4][5][6] while European and U.S. groups have studied both P-a-Si:H/N-c-Si and N-a-Si:H/P-c-Si, structures, [7][8][9][10]30 with the maximum efficiency on P-type substrates reaching between 17% and 18%. 7,10,30 Recent studies have focused on the optimization of these devices in order to maximize the conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…4 Their initial double HIT cells ͑where both the emitter and BSF layers are amorphous, and hence have HJs at either end of the c-Si wafer͒ also suffered from low V oc . 5 However, in spite of this drawback, the efficiency ͑͒ was remarkably high, due to very high values of the fill factor ͑FF͒ and short-circuit current density ͑J sc ͒, the latter mainly due to improved light-trapping induced by a textured c-Si surface. In recent editions of their cells.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

Rahmouni¹,

Datta

Chatterjee

et al. 2010

Journal of Applied Physics

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Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon ͑c-Si͒ solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon ͑a-Si:H͒ emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high V oc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

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High-efficiency a-Si/c-Si heterojunction solar cell

Cited by 99 publications

References 16 publications

Polyaniline on crystalline silicon heterojunction solar cells

Polyaniline on crystalline silicon heterojunction solar cells

Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

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