Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a novel platform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3 (3d -5d oxide) interfaces by tuning the LaMnO3 growth conditions which controls the lattice displacement and spin-correlated interfacial coupling through charge transfer. We report on a tunable and enhanced interface-induced Rashba spin-orbit coupling and Elliot-Yafet spin relaxation mechanism in LaMnO3/SrIrO3 bilayer with change in the underlying magnetic order of LaMnO3. We also observed enhanced spin-orbit coupling strength in LaMnO3/SrIrO3 compared to previously reported SrIrO3 layers. The X-Ray spectroscopy measurement reveals the quantitative valence of Mn and their impact on charge transfer. Further, we performed angle-dependent magnetoresistance measurements, which show signatures of magnetic proximity effect in SrIrO3 while reflecting the magnetic order of LaMnO3. Our work thus demonstrates a new route to engineer the interface induced Rashba spin-orbit coupling and magnetic proximity effect in 3d -5d oxide interfaces which makes SrIrO3 an ideal candidate for spintronics applications.

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Strain engineering is an important issue in oxides thin lms to explore new functionalities. Here, a series of high quality epitaxial PrVO 3 (PVO) thin lms were grown, by Pulsed Laser Deposition (PLD) technique, as a function of thickness on (La,Sr)(Al,Ta)O 3 (100) [LSAT (100)] and LaAlO 3 (100) [LAO (100)] substrates with nominal lattice mismatch of-0.8 % and-2.9 %, respectively. The X-ray diraction revealed a constant out-of-plane lattice parameter of PVO/LSAT with increase in lm thickness, while a rather continuous decrease for PVO/LAO lms. Whereas thicker PVO lms show a ferromagnetic-like behavior, at low thickness a surprising decrease of coercivity (H c) and increase of saturation magnetization (M s) is observed. This behavior is described using a classical model of dead layer which possesses a strong paramagnetic susceptibility. It is also shown how capping of PVO lm can aid in recovering the pure magnetic properties of PVO, by diminishing the contribution from dead layer. Finally, the Néel temperature (T N) is examined as a function of lm thickness, and found to vary in the range of 25 K and 30 K for LSAT and LAO, respectively. These results pave the way for the use of vanadate in thin lm devices.

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