Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (∼350 devices), fast switching (≤30 ns), excellent endurance (∼10 cycles), stability (>10 s) and scalability (down to ∼60 nm). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

No abstract

No abstract

The terahertz part of the electromagnetic spectrum possesses numerous promising applications such as high-speed wireless communication, security screening, chemical identification, and nondestructive biosensing. [1] However, the terahertz spectral region has remained technologically uncharted, due to the lack of efficient devices to generate, manipulate, and detect terahertz waves. In the past decade, there has been a significant progress in active control of terahertz waves using metamaterials integratedThe strikingly contrasting optical properties of various phases of chalcogenide phase change materials (PCM) has recently led to the development of novel photonic devices such as all-optical non-von Neumann memory, nanopixel displays, color rendering, and reconfigurable nanoplasmonics. However, the exploration of chalcogenide photonics is currently limited to optical and infrared frequencies. Here, a phase change material integrated terahertz metamaterial for multilevel nonvolatile resonance switching with spatial and temporal selectivity is demonstrated. By controlling the crystalline proportion of the PCM film, multilevel, non-volatile, terahertz resonance switching states with long retention time at zero hold power are realized. Spatially selective reconfiguration at submetamaterial scale is shown by delivering electrical stimulus locally through designer interconnect architecture. The PCM metamaterial also features ultrafast optical modulation of terahertz resonances with tunable switching speed based on the crystalline order of the PCM film. The multilevel nonvolatile, spatially selective, and temporally tunable PCM metamaterial will provide a pathway toward development of novel and disruptive terahertz technologies including spatio-temporal terahertz modulators for high speed wireless communication, neuromorphic photonics, and machine-learning metamaterials.

Phase change materials provide unique reconfigurable properties for photonic applications that mainly arise from their exotic characteristic to reversibly switch between the amorphous and crystalline nonvolatile phases. Optical pulse based reversible switching of nonvolatile phases is exploited in various nanophotonic devices. However, large area reversible switching is extremely challenging and has hindered its translation into a technologically significant terahertz spectral domain. Here, this limitation is circumvented by exploiting the semiconducting nature of germanium antimony telluride (GST) to achieve dynamic terahertz control at picosecond timescales. It is also shown that the ultrafast response can be actively altered by changing the crystallographic phase of GST. The ease of fabrication of phase change materials allows for the realization of a variable ultrafast terahertz modulator on a flexible platform. The rich properties of phase change materials combined with the diverse functionalities of metamaterials and all-optical ultrafast control enables an ideal platform for design of efficient terahertz communication devices, terahertz neuromorphic photonics, and smart sensor systems.