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Fraunhofer ISE's concept for an advanced metallization of silicon solar cells is based on a two-step process: the deposition of a seed layer to form a mechanical and electrical contact and the subsequent thickening of this seed layer by a plating step, preferably by light-induced plating (LIP). The concept of a multi-layer metallization is used for most of the relevant high-efficiency cell types in industry. The main advantage of this concept is that each layer can be optimized individually, i.e. the seed layer to achieve an optimal electrical and mechanical contact and the plated layer in terms of high lateral conductivity and good solderability. Solar cells results with seed layers fabricated by aerosol printing, chemical Ni plating on cells with a laser-structured dielectric layer and laser-enhanced Ni plating are presented

Self-modulation of an electron beam in a plasma has been observed. The propagation of a long (several plasma wavelengths) electron bunch in an overdense plasma resulted in the production of multiple bunches via the self-modulation instability. Using a combination of a radio-frequency deflector and a dipole spectrometer, the time and energy structure of the self-modulated beam was measured. The longitudinal phase space measurement showed the modulation of a long electron bunch into three bunches with an approximately 200  keV/c amplitude momentum modulation. Demonstrating this effect is a breakthrough for proton-driven plasma accelerator schemes aiming to utilize the same physical effect.

The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at lambda = 1.03 µm wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO2 interface after laser irradiation. More than one pulse on the same position, however, causes structural modification of the silicon after thin film ablation in any case

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